Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T04:57:36.723Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermoelectric properties of Mg2Si1−xCx crystals grown by the vertical Bridgman method

Published online by Cambridge University Press:  01 February 2011

Takashi Sakuma ,
Yoshinori Higuchi ,
Masayasu Akasaka ,
Tsutomu Iida  and
Yoshifumu Takanashi
Takashi Sakuma
Affiliation:
[email protected], student, 2641 Yamazaki, noda, Chiba, 278-8510, Japan
Yoshinori Higuchi
Affiliation:
[email protected], Japan
Masayasu Akasaka
Affiliation:
[email protected], Japan
Tsutomu Iida
Affiliation:
[email protected], Japan
Yoshifumu Takanashi
Affiliation:
[email protected], Japan
Get access

Abstract

Multicrystalline Mg2Si crystals were grown using a Brigdman method combined with a die-casting growth technique. Although molten and/or vapor-phase Mg at elevated growth temperatures exhibit high chemical reactivity with the surrounding crucible materials, the use of an alumina crucible with a BN coating allowed single phase crystal growth and Mg2Si of good crystalline quality. Incorporation of carbon into the Mg2Si was observed to form Mg2Si1−xCx. For x=0.01 and 0.03, a lower thermal conductivity and higher figure of merit than those of Mg2Si were observed in the temperature range from room temperature to 773 K. The maximum figure of merit was 0.62 at 773 K for a Mg2Si0.99C0.01 sample.

Keywords

thermoelectricitycrystal growthMg
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F11-13
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Whitsett, C.R. and Danielson, G.C., Phys. Rev., Vol. 100 (1955) 1261.Google Scholar
2. Morris, R.G., Redin, R.D. and Danielson, G.C., Phys. Rev., Vol.109 (1958) 1909.Google Scholar
3. LaBotz, R.J., Mason, D.R., O'Kane, D.F., J. Electrochem. Soc., vol. 110, (1963) 127.Google Scholar
4. Lee, P.M., Phys. Rev., vol. 135(4A), (1964) 1110.Google Scholar
5. Harman, T.C., Taylor, P.J., Spears, D.L., Walsh, M.P., J. Electron. Mater., Vol.29 (2000) L1.Google Scholar
6. Caillat, T., Borshchevsky, A. and Fleurial, J. -P., J. Appl. Phys., Vol. 80 (1996) 4442.Google Scholar
7. Yoshinaga, M., Iida, T., Noda, M., Endo, T. and Takanashi, Y., Thin Solid Films, vol. 461, (2004) pp. 86–89.Google Scholar
8. Soga, J., Iida, T., Higuchi, Y., Sakuma, T., Makino, K., Akasaka, M., Nemoto, T. and Takanashi, Y., Proceeding of the IEEE 24th Intl. Conference on Thermoelectrics, (2005) In press.Google Scholar
9. Sakuragi, S., Shimasaki, T., Sakuragi, G., Nanba, H., Proceedings of 19th European Photovoltaic Solar Energy Conference, France 7–11 June 2004, In press.Google Scholar
10. Sakuragi, S., Proceedings of 19th European Photovoltaic Solar Energy Conference, France 7–11 June 2004, In press.Google Scholar