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Thermoelectric properties of III-nitrides and III-oxynitrides prepared by reactive rf-sputtering: targetting a thermopower device

Published online by Cambridge University Press:  11 February 2011

S. Yamaguchi ,
Y. Iwamura  and
A. Yamamoto
S. Yamaguchi
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
Y. Iwamura
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
A. Yamamoto
Affiliation:
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
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Abstract

We have studied thermoelectric properties of III-nitrides of Al1-xInxN and III-oxynitrides of Al1-xInxOsNt and InOsNt prepared by radio-frequency sputtering with the aim of fabricating a thermoelectric power device based on III-nitride semiconductors. For Al0.55In0.45N, the maximum value of power factor was 3.63×10−4 W/mK2 at 873K. For Al0.02In0.98O1.14N0.49 and Al0.14In0.86O1.30N0.67, the maximum power factor was 2.82×10−4 W/mK2 and 4.73×10−4 W/mK2 at 873 K, respectively. For InO0.82N0.86, it was 3.75×10−4 W/mK2 at 973 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L6.11
Copyright
Copyright © Materials Research Society 2003

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References

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