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Thermoelectric Power Measurement of Catalyst-free Si-doped GaAs Nanowires

Published online by Cambridge University Press:  30 July 2012

Masahito Yamaguchi ,
Jihyun Paek  and
Hiroshi Amano
Masahito Yamaguchi
Affiliation:
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Jihyun Paek
Affiliation:
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
Hiroshi Amano
Affiliation:
Department of Electrical Engineering and Computer Science, Nagoya University, C3-1, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan Akasaki Research Center, Nagoya University, B2-5, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Abstract

Si-doped GaAs nanowires (NWs) were grown on (111)Si substrate by MBE-VLS method. The electrical characteristics of the GaAs NWs were measured. A joule heater was arranged near the tip of NW for making the gradient of substrate temperature. The obtained Seebeck coefficient of the GaAs NW increases linearly with a rise in temperature. The thermoelectric power of the Si doped GaAs NW was determined by the hole diffusion. It was estimated that the hole density in the Si-doped GaAs NW at room temperature was 5.9×1018 cm-3 from the slope of the temperature dependence of the Seebeck coefficient in the Si-doped GaAs NW. At room temperature, the Seebeck coefficient, thermoelectric power factor, and thermoelectric figure of merit (ZT) were 429 μV/K, 271μW/mK2, and 1.5×10-3, respectively.

Keywords

molecular beam epitaxy (MBE)nanostructurethermoelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 83 - 87
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Mingo, N., Appl. Phys. Lett. 84, 2652 (2004).CrossRefGoogle Scholar
Paek, J. H., Nishiwaki, T., Yamaguchi, M. and, Sawaki, N., Phys. Stat. Sol.(c) 6, 1436 (2009).CrossRefGoogle Scholar
Dufouleur, J., Colombo, C., Garma, T., Ketterer, B., Uccelli, E., Nicotra, M., and Fontcuberta i Morral, A., Nano Lett. 10, 1734 (2010).CrossRefGoogle Scholar
Lee, C.H., Yi, G.C., Zuev, Y.M., and Kim, P., Appl. Phys. Lett. 94, 022106 (2009).CrossRefGoogle Scholar
Soini, M., Zardo, I., Uccelli, E., Funk, S., Koblmüller, G., Fontcuberta i Morral, A., and Abstreiter, G., Appl. Phys. Lett. 97, 263107 (2010).CrossRefGoogle Scholar