Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-24T09:03:53.006Z Has data issue: false hasContentIssue false

Thermochromic VO2 Films Heteroepitaxially Grown on ZnO Coated Glass by RF Sputtering

Published online by Cambridge University Press:  21 March 2011

Kazuhiro Kato
Affiliation:
College of Science and Engineering, Aoyama Gakuin University, Chitosedai, Setagaya-ku, Tokyo, 157-8572, Japan
Pung Keun Song
Affiliation:
College of Science and Engineering, Aoyama Gakuin University, Chitosedai, Setagaya-ku, Tokyo, 157-8572, Japan
Yuzo Shigesato
Affiliation:
College of Science and Engineering, Aoyama Gakuin University, Chitosedai, Setagaya-ku, Tokyo, 157-8572, Japan
Hidehumi Odaka
Affiliation:
Research Center, Asahi Glass Co., Ltd., Hazawa, Kanagawa-ku, Yokohama 221-0863, Japan
Get access

Abstract

Vanadium dioxide (VO2) is one of the most attractive thermochromic materials, which shows large changes in optical and electrical properties at around 68°C, nearly room temperature. This thermochromic behavior has been explained in terms of the Mott-Hubbard transition from a high-temperature rutile structure (metal phase) to a low-temperature monoclinic structure (semiconductor phase). We already reported that rf magnetron sputtering using V2O3 or V2O5 targets enable us to deposit polycrystalline thermochromic VO2 films with high reproducibility by introduction of oxygen gas (O2/(Ar+O2)=1∼1.5%) or hydrogen gas (H2/(Ar+H2)=2.5∼10%), respectively, as reactive gases [see ref.1]. In this study, ZnO polycrystalline films were deposited as a buffer layer between the VO2 film and glass substrate also by rf magnetron sputtering, which have been known to exhibit <001> preferred orientation in the wide range of the deposition conditions. Very thin thermochromic VO2 films with thickness of 50nm were successfully deposited on the ZnO coated glass substrate because of the heteroepitaxial relationship of VO2(010)[100]//ZnO(001)[100],[010],[110].

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Shigesato, Y., Enomoto, M. and Odaka, H.: Jpn. J. Appl. Phys. Vol. 39(2000) 6016.Google Scholar
2) Morin, F.: Phys. Rev. Lett. 3 (1959) 34.Google Scholar
3) Imada, M., Fujimori, A. and Tokura, Y.: Rev. Mod. Phys. 70 (1998) 1232.Google Scholar
4) Babulanam, S. M., Eriksson, T. S., Niklasson, G. A. and Granqvist, C. G.: Sol. Energy Mater. 16 (1987) 347.Google Scholar
5) Jorgenson, G. V. and Lee, J. C.: Sol. Energy Mater. 14 (1986) 205.Google Scholar
6) Zylbersztejn, A. and Mott, N. F.: Phys. Rev. B 11(1975) 4383.Google Scholar
7) Goodenough, J. B.: Ann. Rev. Mater. Sci. 1 (1971) 101.Google Scholar
8) Goodenough, J. B.: J. Solid State Chem. 3 (1971) 490.Google Scholar
9) Futaki, H. and Aoki, M.: Jpn. J. A. Phys. 8 (1969) 1008.Google Scholar
10) Jin, P. and Tanemura, S.: Jpn. J. A. Phys. 34(1995) 2459.Google Scholar
11) Case, F. C.: J. Vac. Sci. & Technol. A 5 (1987) 1762.Google Scholar
12) Kim, D. H. and Kwok, H. S.: Appl. Phys. Lett. 65 (1994) 3188.Google Scholar
13) Yi, C. H., Yasui, I. and Shigesato, Y.: Jpn. J. Appl. Phys. 34, Part 1, 3(1995) 1638.Google Scholar