Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-02T23:28:38.128Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermally-Induced Change of Conductivity and Defect Density in Amorphous Silicon-Germanium Alloys

Published online by Cambridge University Press:  25 February 2011

Tatsuo Shimizu ,
Xixiang Xu ,
Hiroyuki Sasaki ,
Hui Yan ,
Akiharu Morimoto  and
Minoru Kumeda
Tatsuo Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Xixiang Xu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Hiroyuki Sasaki
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Hui Yan
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Akiharu Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Get access

Abstract

Thermally-induced metastable phenomena in amorphous silicon-germanium alloys were studied by conductivity and ESR measurements. Fast cooling from 250 °C reduced both dark- and photo-conductivities by a factor of 3–4 while the neutral defect density remained unchanged. Thermally-induced change in conductivity relaxed towards equilibrium with a stretched exponential form. The thermal equilibrium temperature was found to be roughly proportional to the optical gap for a–Si:H, a–Sii−xCx:H, a–Si1−xNx:H and a–Si1−xGex:H:F.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 695
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Hauschildt, D., Fischer, R. and Fuhs, W., phys. stat. sol.(b)102, 563 (1980).Google Scholar
2. Hamakawa, Y. and Okamoto, H., in “Amorphous Semiconductor Technologies and Devices”, JARECT 16, (North Holland, New York 1984), p.200.Google Scholar
3. Aljishi, S., Smith, Z E. and Wagner, S., in “Amorphous Silicon and Related Materials”, ed. by Fritzsche, H., World Scientific Publishing Co., Singapore, 1989, p.887.Google Scholar
4. Liu, J., Chu, V., Shen, D. S., Slobodin, D. and Wagner, S., Phys. Rev. B40, 6424 (1989).Google Scholar
5. Xu, X., Sasaki, H., Morimoto, A., Kumeda, M. and Shimizu, T., Phys. Rev. B41, (1990) (in press).Google Scholar
6. Kakalios, J., Street, R. A. and Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar