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Thermal Stability of Nickel Silicide Films

Published online by Cambridge University Press:  15 February 2011

S. R. Das ,
D.-X. XU ,
M. Nournia ,
L. Lebrun  and
A. Naem
S. R. Das
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
D.-X. XU
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
M. Nournia
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
L. Lebrun
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KIA 0R6, Canada
A. Naem
Affiliation:
Northern Telecom Limited, 185 Corkstown Road, P.O. Box 3511, Station C, Ottawa, Ontario K 1Y 4H7, Canada
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Abstract

In view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 541
Copyright
Copyright © Materials Research Society 1996

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References

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