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Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

Published online by Cambridge University Press:  14 July 2014

Vanessa Vervisch ,
Fatima Issa ,
Stéphane Biondo ,
Laurent Ottaviani ,
Wilfried Vervisch ,
Dora Szalkai ,
Ludo Vermeeren ,
Axel Klix ,
Anders Hallen  and
Andrej Kuznetsov
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Vanessa Vervisch
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Fatima Issa
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Stéphane Biondo
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Laurent Ottaviani
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Wilfried Vervisch
Affiliation:
IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
Dora Szalkai
Affiliation:
KIT-Neutron Laboratory TU Dresden and Reactor Technology Helmholtz-Zentrum, Germany
Ludo Vermeeren
Affiliation:
SCK•CEN, Boeretang 200, B-2400 Mol, Belgium
Axel Klix
Affiliation:
KIT-Neutron Laboratory TU Dresden and Reactor Technology Helmholtz-Zentrum, Germany
Anders Hallen
Affiliation:
KTH, Electrum 229, 16440 Kista, Sweden
Andrej Kuznetsov
Affiliation:
University of Oslo, PO Box 1048 Blindern, NO-0316 Oslo, Norway
Mihai Lazar
Affiliation:
AMPERE (UMR 5005) – INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne, France
Abdallah Lyoussi
Affiliation:
CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-Lez-Durance, France
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Abstract:

The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

Keywords

electrical propertiesdevicesneutron irradiation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd03-09
Copyright
Copyright © Materials Research Society 2014 

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References

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