Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T01:44:59.576Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Expansion of Low Dielectric Constant Thin Films by High-Resolution X-Ray Reflectivity

Published online by Cambridge University Press:  01 February 2011

Kazuhiko Omote  and
Yoshiyasu Ito
Kazuhiko Omote
Affiliation:
X-Ray Research Laboratory, Rigaku Corporation, Akishima, Tokyo, 196-8666, JAPAN
Yoshiyasu Ito
Affiliation:
X-Ray Research Laboratory, Rigaku Corporation, Akishima, Tokyo, 196-8666, JAPAN
Get access

Abstract

By introducing high precision sample alignment technique, repeatability of incident angle to the sample surface for x-ray reflectivity (XRR) measurement is achieved to be within 0.3 arcsec. As a result, film thickness and density are possible to be measured repeatability within 0.03% and density within 0.26%. This accuracy realized to detect very small change of thermal expansion of thin films. The coefficient of thermal expansions (CTE) for porous low-k films deposited by CVD method were measured up to 400°C. The obtained values are in the range from 40 to 80 x10-6 K-1 and they are very large compare to that of copper (16-20 x10-6 K-1).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O8.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. For example, Proceedings of the IEEE 2001 International Interconnect Technology Conference, San Francisco, Calfolnia, USA.Google Scholar
2. Nielsen, J. A., “Elements of Modern X-Ray Physics,” (Wiley, 2001) pp. 61–78.Google Scholar
3. Wu, W., Wallance, W. E., Lin, E. K., and Lynn, G. W., J. Appl. Phys. 87, 1193 (2000).Google Scholar