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Thermal Equilibration and Growth of Doped Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

J. Kakalios ,
R. A. Street ,
C. C. Tsai  and
R. Weisfield
J. Kakalios
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R. Weisfield
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The relation between the thermal equilibration of the defect structure in n-type doped hydrogenated amorphous silicon (a-Si:H) and the deposition conditions has been investigated. When the deposition rate is increased by raising the rf power the equilibration time constants become longer, though the thermal equilibrium processes are qualitatively similar to those in samples grown under optimal conditions. Models relating the slower equilibration rate to the deposition-induced microstructure are explored.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 243
Copyright
Copyright © Materials Research Society 1987

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