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The Thermal Conductivity of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

W. Lang ,
A. Drost ,
P. Steiner  and
H. Sandmaier
W. Lang
Affiliation:
Institut für Festkörpeitechnologie, Hansastr. 27d, 80686 München.Tel 089 54759 226, Fax 089 54759 100
A. Drost
Affiliation:
Institut für Festkörpeitechnologie, Hansastr. 27d, 80686 München.Tel 089 54759 226, Fax 089 54759 100
P. Steiner
Affiliation:
Institut für Festkörpeitechnologie, Hansastr. 27d, 80686 München.Tel 089 54759 226, Fax 089 54759 100
H. Sandmaier
Affiliation:
Institut für Festkörpeitechnologie, Hansastr. 27d, 80686 München.Tel 089 54759 226, Fax 089 54759 100
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Abstract

The thermal conductivity of porous silicon is measured as prepared and after oxidation. The measurement method uses thermal wave propagation in the porous film. We investigate three types of porous silicon: Nanoporous p-type silicon, nanoporous n-type silicon and mesoporous p+-type silicon. The nanoporous material shows a thermal conductivity in the region of 1.2 W/mK to 1.8 W/mK as prepared and after oxidation. This value is close to silicon oxide. The mesoporous material shows a high thermal conductivity of 80 W/mK as prepared which drops to 2.7 W/mK after oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 561
Copyright
Copyright © Materials Research Society 1995

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References

References:

1 Tabata, O., IEEE Trans. on Electron Devices, ED–34, No. 12, (1987)Google Scholar
2 Richter, A., Steiner, P., Kozlowski, F., Lang, W.: Electron Device Letters. 12, No. 12, Dec. 1991 Google Scholar
3 Drost, A., Steiner, P., Moser, H., Lang, W.: To be printed by "Sensors & Materials".Google Scholar
4 Canham, L. T.: Appl. Phys. Lett. 57 (1990) 1046.Google Scholar
5 Silicon Processing for the VLSI Era. Wolf, S. and Tauber, R. N. (Lattice Press, Sunset Beach 1987), p.199 Google Scholar
6 Lang, W., Steiner, P. and Kozlowski, F.: J. of Luminescence 57 (1993) 431–439 Google Scholar
7 Kozlowski, F. and Lang, W.: J. Appl. Phys., 72, (1992) p.5401 Google Scholar