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Thermal Conductivity and Natural Cooling Rate of Excimer-Laser Annealed SI: A Molecular Dynamics Study

Published online by Cambridge University Press:  01 February 2011

Byoung-Min Lee ,
Baek Seok Seong ,
Hong Koo Baik ,
Shinji Munetoh  and
Teruaki Motooka
Byoung-Min Lee
Affiliation:
[email protected], Korea Atomic Energy Research Institute, Neutron Physics Department, P.O.B. 105, Yuseong, Daejeon, 305-600, Korea, Republic of
Baek Seok Seong
Affiliation:
[email protected], Korea Atomic Energy Research Institute, Neutron Physics Department, 150 Dukjin-dong,, Yuseong, Daejeon, 305-600, Korea, Republic of
Hong Koo Baik
Affiliation:
[email protected], Yonsei University, Dept. of Metallurgical Engineering, 134 Shinchon-dong,, Seodaemoon-ku, Seoul, 120-749, Korea, Republic of
Shinji Munetoh
Affiliation:
[email protected], Kyushu University, Dept. of Materials Science and Engineering, 744 Motooka,, Nishi-ku, Fukuoka, 819-0395, Japan
Teruaki Motooka
Affiliation:
[email protected], Kyushu University, Dept. of Materials Science and Engineering, 744 Motooka,, Nishi-ku, Fukuoka, 819-0395, Japan
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Abstract

To investigate the relationship between the thermal conductivity and the cooling rate, we have performed molecular-dynamics (MD) simulations based on a combination of the Langevin and Newton equations to deal with a heat transfer from l-Si to c-Si. The thermal conductivity of c-Si was measured by the direct method. In order to deal with finite-size effects, different cell sizes perpendicular to the direction of the heat current were used. The values of the thermal conductivity of 58 W/mK and 35.7 W/mK in the Tersoff potential were obtained at 1000 K and 1500 K, respectively. A MD cell with a length of 488.75 ¡Ê in the direction of a heat flow was used for estimating the natural cooling rate. The initial c/l interface systems were obtained by setting the temperatures of the MD cell at 1000 K and 1500 K, respectively, for Z <= 35 ¡Ê and 3800 K for Z > 35 ¡Ê. During the natural cooling processes, the temperature of the bottom 10 ¡Ê of the MD cell was controlled. The cooling rates of 7.4 × 1011 K/sec for 1000 K and 5.9 × 1011 K/sec for 1500 K were obtained, respectively.

Keywords

Sithermal conductivitysimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A05-05
Copyright
Copyright © Materials Research Society 2006

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