Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T07:21:56.280Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Budget Reduction for Back-end Compatibility and Control of Resistance Switching Mechanism (Unipolar to Bipolar) in Pr1-xCaxMnO3 (PCMO) RRAM

Published online by Cambridge University Press:  20 March 2013

Neeraj Panwar ,
Gurudatt Rao ,
N. Ravi Chandra Raju ,
Rajashree Nori ,
Pankaj Kumbhare ,
Sanchit Deshmukh ,
Senthil Srinivasan V S ,
N. Venkataramani  and
Udayan Ganguly
Neeraj Panwar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Gurudatt Rao
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai-400076, India.
N. Ravi Chandra Raju
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Rajashree Nori
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Pankaj Kumbhare
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Sanchit Deshmukh
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Senthil Srinivasan V S
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
N. Venkataramani
Affiliation:
Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai-400076, India.
Udayan Ganguly
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076, India.
Get access

Abstract

A low thermal budget process for back-end compatible PCMO based RRAM cell is essential for 3D stacked memory. In this paper, we investigate two strategies to engineer low thermal budget processing for bipolar switching - (i) deposition engineering i.e. based on deposition temperature and oxygen partial pressure, (ii) post deposition anneal i.e. based on inert anneal of room temperature deposited PCMO film.. We demonstrate that both deposition and anneal shows a transition temperature above which bipolar switching is realized. Oxygen partial pressure is a key deposition process parameter. As oxygen partial pressure is reduced memory window increases, however beyond an optimal O2 partial pressure, unipolar switching is observed. Inert anneal is more effective in thermal budget reduction as N2/550°C/2min anneal has same memory performance as 650°C/2hour deposition process.

Keywords

laser ablationnanoscaleoxide
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa09-27
Copyright
Copyright © Materials Research Society 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Park, T. J., Kwon, Y. M., Ahn, D. H., Kang, Y. S., Jeong, H., Ahn, S. J., Song, Y. J., Kim, B. C., Nam, S.W., Kang, H. K., Jeong, G. T. and Chung, C. H., Proc., IEEE Int. Elect. Dev. Meet. (IEDM) 11, 3.1.1-3.1.4 (2011).Google Scholar
Seong, D., Park, J., Lee, N., Hasan, M., Jung, S., Choi, H., Lee, J., Jo, M., Lee, W., Park, S., Kim, S., Jang, Y. H., Lee, Y., Sung, M., Kil, D., Hwang, Y., Chung, S., Hong, S., Roh, J. and Hwang, H., Proc., IEEE Int. Elec. Dev. Meet. (IEDM) 09, 5.4.1-5.4.4, (2009).Google Scholar
Jung, S., Siddik, M., Lee, W., Park, J., Liu, X., Woo, J., Choi, G., Lee, J., Lee, N., Jang, Y. H. and Hwang, H., Proc., IEEE Int. Elec. Dev. Meet. (IEDM) 11, 3.6.1-3.6.4, (2011).Google Scholar
Kim, D. S., Lee, C. E., Kim, Y. H. and Kim, Y. T., J. Appl. Phys. 100, 093901 (2006).10.1063/1.2364386CrossRefGoogle Scholar
Liu, X., Biju, K. P., Bourim, E. M., Park, S., Lee, W., Shin, J. and Hwang, H., Sol. Stat. Comm., 150, 2231–2235, (2010).10.1016/j.ssc.2010.09.036CrossRefGoogle Scholar
Li, S., Li, J., Zhang, Y., Zheng, D., Kazuhito, and Tsukagoshi, , Appl. Phys. A, 103, 21–26 (2011).10.1007/s00339-011-6313-4CrossRefGoogle Scholar
Liu, X., Biju, K. P., Bourim, E. M., Park, S., Lee, W., Lee, D., Seo, K. and Hwang, H., Electrochem. Sol. Stat. Lett., 14 (1), H9–H12, (2011).10.1149/1.3505098CrossRefGoogle Scholar
Kim, Y., Kang, S., Kim, K., Lee, N. S., Lee, W., J. Korean. Phys. Soc. 54, 209 (2009).10.3938/jkps.54.209CrossRefGoogle Scholar