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Theory of large-scale electronic structure calculation and nanoscale mechanical property in fracture behavior of silicon

Published online by Cambridge University Press:  01 February 2011

Takeo Hoshi ,
Ryu Takayama ,
Yusuke Iguchi  and
Takeo Fujiwara
Takeo Hoshi
Affiliation:
Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo, Japan. Core Research for Evolutional Science and Technology (CREST-JST), Japan Science and Technology Agency, Honcho, Kawaguchi-shi, Saitama,Japan.
Ryu Takayama
Affiliation:
Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo, Japan. Research and Development for Applying Advanced Computational Science and Technology (ACT-JST), Japan Science and Technology Agency.
Yusuke Iguchi
Affiliation:
Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo, Japan.
Takeo Fujiwara
Affiliation:
Department of Applied Physics, University of Tokyo, Hongo, Bunkyo-ku, Tokyo, Japan. Core Research for Evolutional Science and Technology (CREST-JST), Japan Science and Technology Agency, Honcho, Kawaguchi-shi, Saitama,Japan.
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Abstract

Several theories and program codes were developed for large-scale atomistic simulations with fully quantum mechanical description of electron systems. The fundamental concepts are generalized Wannier state and Krylov subspace. Test calculations were carried out with upto 106 atoms using a standard workstation. How electronic state is described in large-scale calculation was demonstrated on Si(001)-(2×1) surface. As a practical application, cleavage fracture of silicon was simulated with 10-nm-scale samples for investigating its nanoscale mechanical behavior. Discussions are focused on the unstable (001) cleavage mode and the stable (experimentally observed) (111)-(2×1) cleavage mode. As well as elementary surface reconstruction, step formation and bending in cleavage path were observed. These results were compared with experiments, such as scanning tunneling microscope (STM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 880: Symposium BB – Mechanical Properties of Nanostructured Materials-Experiments and Modeling , 2005 , BB5.1
Copyright
Copyright © Materials Research Society 2005

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References

[1] Kohn, W., Phys. Rev. Lett. 76, 3168 (1996).Google Scholar
[2] Hoshi, T. and Fujiwara, T., J. Phys. Soc. Jpn. 69, 3773 (2000).Google Scholar
[3] Hoshi, T. and Fujiwara, T., Surf. Sci. 493, 659 (2001).Google Scholar
[4] Hoshi, T. and Fujiwara, T., J. Phys. Soc. Jpn. 72, 2429 (2003).Google Scholar
[5] Geshi, M., Hoshi, T., and Fujiwara, T., J. Phys. Soc. Jpn. 72, 2880 (2003).Google Scholar
[6] Takayama, R., Hoshi, T., and Fujiwara, T., J. Phys. Soc. Jpn. 73, 1519 (2004).Google Scholar
[7] Hoshi, T., Iguchi, Y. and Fujiwara, T., preprint (cond-mat/0409142).Google Scholar
[8] Takayama, R., Hoshi, T., Sogabe, T., Zhang, S.-L. and Fujiwara, T., preprint (condmat/0503394).Google Scholar
[9] The current reference list can be found in http://fujimac.t.u-tokyo.ac.jp/hoshi/Google Scholar
[10] Kwon, I., Biswas, R., Wang, C. Z., Ho, K. M., and Soukoulis, C. M., Phys. Rev. B 49, 7242 (1994).Google Scholar
[11] As textbooks, Golub, G. H. and Loan, C. F. Van, Matrix Computations, third ed., Johns Hopkins University Press, London (1996); H. A. van der Vorst, Iterative Krylov methods for large linear systems, Cambridge University Press (2003).Google Scholar
[12] See the following recent work or references therein; Stekolnikov, A. A., Furthmüller, J., and Bechstedt, F., Phys. Rev. B 65, 115318 (2002).Google Scholar
[13] Dronskowski, R. and Blöchl, P. E., J. Phys. Chem. 97, 8617 (1993).Google Scholar
[14] Pandey, K. C., Phys. Rev. Lett. 47, 1913 (1981).Google Scholar
[15] See references in Ref. [7].Google Scholar
[16] Feenstra, R. M. and Stroscio, J. A., Phys. Rev. Lett. 59, 2173 (1987).Google Scholar
[17] Tokumoto, H., Wakiyama, S., Miki, K., Murakami, H., Okayama, S., and Kajimura, K., J. Vac. Sci. & Technol. B 9 695 (1991); T. Komeda, S. Gwo, and H. Tokumoto, Jpn. J. Appl. Phys. 35, 3724 (1996).Google Scholar
[18] Mera, Y., Hashizume, T., Maeda, K., and Sakurai, T., Ultramicroscopy 42-44, 915 (1992).Google Scholar
[19] Feenstra, R. M., Thompson, W. A. and Fein, A. P. Phys. Rev. Lett. 56, 608 (1986); J. A. Stroscio, R. M. Feenstra and A. P. Fein Phys. Rev. Lett. 57, 2579 (1986).Google Scholar