No CrossRef data available.
Article contents
A Theoretical and Experimental Study of the Chemical Bonding in AgGaS2
Published online by Cambridge University Press: 15 February 2011
Abstract
AgGaS2 is a technologically important semiconductor for its large birefringence coefficient. In this work we compare the theoretical ab-initio all-electron FLAPW results with very refined experimental data obtained with accurate X-ray analysis. In particular we focus our attention to the electronic distribution along the significative bonding directions connecting the three different atoms. Furthermore, the charge density contours around Ag provide a clear evidence of the contribution of its d orbitals to the chemical bond.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997