Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T19:08:52.011Z Has data issue: false hasContentIssue false
  • English
  • Français

Theoretical and Experimental Analysis of the Low Dielectric Constant of Fluorinated Silica

Published online by Cambridge University Press:  15 February 2011

A. Demkov ,
R. Liu ,
S. Zollner ,
D. Werho ,
M. Kottke ,
R.B. Gregory ,
M. Angyal ,
S. Filipiak ,
L.C. Mcintyre Jr.  and
M.D. Ashbaugh
A. Demkov
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
R. Liu
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
S. Zollner
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
D. Werho
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
M. Kottke
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
R.B. Gregory
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
M. Angyal
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
S. Filipiak
Affiliation:
Motorola Semiconductor Products Sector, Mesa, AZ
L.C. Mcintyre Jr.
Affiliation:
Department of Physics, University of Arizona, Tucson, AZ
M.D. Ashbaugh
Affiliation:
Department of Physics, University of Arizona, Tucson, AZ
Get access

Abstract

Fluorinated silica has a dielectric constant E in the range of 3—3.5, lower than that of F-free SiO2 (ω=4). The reasons behind this reduction are controversial. It is not known whether the electronic or ionic contributions to the overall screening are being diminished upon F doping. To shed more light on this phenomenon we have studied F-doped SiO2 with ab-initio modeling and various characterization techniques. FTIR transmission and spectroscopic ellipsometry give us information about the ionic and electronic contributions to ω Nuclear reaction analysis and Auger spectrometry measure F composition. XPS and FTIR provide information on the atomic structure and stability of the film. We use a large cell of cristobalite to model fluorinated silica theoretically. The ground state geometry is obtained via energy minimization. We calculate the vibrational density of states and find a localized mode (Si-F stretch), in good agreement with FTIR transmission. We analyze the effects of F incorporation on the dielectric properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 579: Symposium B – The Optical Properties of Materials , 1999 , 255
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lucovsky, G. and Yang, H., J. Vac. Sci. Technol. A 15, 1509 (1997).Google Scholar
2. Grill, A. et al. , in Low-Dielectric Constant Materials II, edited by Lagendijk, A., Treichel, H., Uram, K., and Jones, A. (Mater. Res. Soc., Pittsburgh, 1996), p. 155.Google Scholar
3. Zhao, D., Yang, P., Melosh, N., Feng, J., Chmelka, B.F., and Stucky, G.D., Adv. Mater. 10, 1380 (1998).Google Scholar
4. Yu, K.C. et al. , in Low-Dielectric Constant Materials V, Mater. Res. Soc. Proc. 565 (in print).Google Scholar
5. Wetzel, J. et al. , in Low-Dielectric Constant Materials, edited by Lu, T.-M., Murarka, S.P., Kuan, T.-S., and Ting, C.H. (Mater. Res. Soc., Pittsburgh, 1995) p.217.Google Scholar
6. Han, S.M. and Aydil, E., J. Vac. Sci. Technol. A 15, 2893 (1997).Google Scholar
7. Han, S.M. and Aydil, E., J. App. Phys. 83, 2172 (1998).Google Scholar
8. Hasegawa, S., Tsukaoka, T., Inokuma, T., Kurata, Y., J. Non-Crystalline Solids 240, 154 (1998).Google Scholar
9. Xu, Y.-N. and Ching, W.Y., Phys. Rev. B 44, 11048 (1991).Google Scholar
10. Demkov, A.A., Ortega, J., Sankey, O.F., and Grumbach, M., Phys Rev. B 52, 1618 (1995).Google Scholar
11. Sankey, O.F., Demkov, A.A., Windl, W., Fritsch, J.H., Lewis, J.P., Fuentes-Cabrera, M., Int. J. Quant. Chem. 69, 327 (1998).Google Scholar
12. Kim, K., Kwon, D.H., Nallapati, G., and Lee, G.S., J. Vac. Sci. Technol. A 16, 1509 (1998).Google Scholar
13. Yoshimary, M., Koizumi, S., and Shimokawa, K., J. Vac. Sci. Technol. A 15, 2908 (1997).Google Scholar
14. Cerius2 software, Molecular Simulations, Inc., San Diego, CA. Google Scholar