Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-24T16:41:48.405Z Has data issue: false hasContentIssue false
  • English
  • Français

Theoretical Analysis of Thermal Conductivity in Amorphous Inter-layer Dielectrics

Published online by Cambridge University Press:  01 February 2011

Manu Shamsa ,
Patrick Morrow  and
Shriram Ramanathan
Manu Shamsa
Affiliation:
[email protected] RiversideElectrical EngineeringRiversideCA 92521United States
Patrick Morrow
Affiliation:
[email protected], Intel, Components Research, Hillsboro, OR, 97124, United States
Shriram Ramanathan
Affiliation:
[email protected], Intel, Components Research, Hillsboro, OR, 97124, United States
Get access

Abstract

Understanding thermal conduction in interlayer dielectrics (ILDs) is important for the optimal design of interconnect layers in backend semiconductor processing for future high-performance nano-scale devices. Reduced thermal conductivity of porous ILDs for example can adversely affect the temperature rise in the embedded metal lines leading to un-desirable reliability issues and design constraints. In this paper, we report results of our theoretical and experimental investigation of thermal transport in amorphous and porous dielectrics. A phonon-hopping model has been adapted to calculate the thermal conductivity in disordered materials. The value of hopping integral has been calculated by comparing the modeling results with experimental data for various amorphous and porous materials. The model shows reasonable agreement with experimental data for various amorphous materials including SiO2 and other glasses over a wide temperature range from 50K – 300K. The model suggests that the hopping of localized high frequency phonons is a dominant thermal transport mechanism in such material systems.

Keywords

dielectricthermal conductivityamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F03-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 The International Technology Roadmap for Semiconductors, 2004 update.Google Scholar
2 Chang, T. and Sarasawat, K. C., Symposium on VLSI Circuits of Technical Papers, 21–2, (2003)Google Scholar
3 Shen, Y.-L., J. Vac. Sci. Tech., B 17, 2115 (1999)Google Scholar
4 Shis, W.-Y., Levine, J. and Chang, M., Proc. Adv. Metall. and Interconnect Sys. For ULSI Appl., 479 (1996)Google Scholar
5 Goodson, K.E. and Ju, Y.S., Annu. Rev. Mater. Sci., 29, 261 (1999)Google Scholar
6 Balandin, A., Encyl. Nanosci. Nanotech., 10, 425 (2004)Google Scholar
7 Chiang, T, Shieh, b. and Saraswat, K.C., Symposium on VLSI Circuits of Technical Papers, 38 (2002)Google Scholar
8 Cahill, D. and Pohl, R.O., Sol. State Comm., 70, 927 (1989)Google Scholar
9 Einstein, A., Ann. Phys. 35, 679 (1911)Google Scholar
10 Hu, A., Morgen, M. and Ho, P.S., Appl. Phys. Lett., 77, 145 (2002)Google Scholar
11 Braginsky, L., Lukzen, N., Shklover, V. and Hofmann, H., Phys. Rev. B, 66, 134203 (2002)Google Scholar
12 Orbach, R., J. Non-Cryst. Solid, 164, 917 (1993)Google Scholar
13 Cahill, D.G. and Pohl, R.O., Phys. Rev. B, 35, 4067 (1987)Google Scholar
14 Shamsa, M., Liu, W., Balandin, A.A. and Liu, J., Appl. Phys. Lett. 87, 202105 (2005)Google Scholar
15 Braginsky, L., Shklover, V., Hofmann, H. and Bowen, P., Phys. Rev. B, 70, 134201 (2004)Google Scholar
16 Cahill, D.G., Rev. Sci. Inst., 75, 5119 (2004)Google Scholar
17 Watson, S. K. and Pohl, R.O., Phys. Rev. B, 68, 104203 (2003)Google Scholar
18 Jain, A., Rogojevic, S., Ponoth, S., Gill, W.N., Simonyi, E., Chen, S. and Ho, P.S., J. Appl. Phys., 91, 3275 (2002)Google Scholar