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Terahertz Emission from Vertically-aligned Silicon Nanowires

Published online by Cambridge University Press:  01 February 2011

Yong Jae Cho ,
Gyeong Bok Jung ,
Yoon Myung ,
Han Sung Kim ,
Young Suk Seo  and
Jeunghee Park
Yong Jae Cho
Affiliation:
[email protected], korea university, 5-ka, Anam-dong, Sunbuk-ku, Seoul 136-701, Korea, Seoul, 136-701, Korea, Republic of
Gyeong Bok Jung
Affiliation:
[email protected], Korea University, Seoul, Korea, Republic of
Yoon Myung
Affiliation:
[email protected], Korea University, Seoul, Korea University, Korea, Republic of
Han Sung Kim
Affiliation:
[email protected], United States
Young Suk Seo
Affiliation:
[email protected], Korea University, Seoul, Korea, Republic of
Jeunghee Park
Affiliation:
[email protected], Korea University, Seoul, Korea, Republic of
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Abstract

Large-area vertically aligned silicon nanowire (Si NW) arrays were synthesized with a controlled length (0.3 ˜ 9 μm) by the chemical etching of n-type silicon substrates. Upon their excitation using a fs Ti-sapphire laser pulse (800 nm), their THz emission intensity exhibits strong dependence on their length; the intensity increases sharply up to a length of 3 μm and then decreases slightly, due to the complete absorption of the optical pump power. The Raman scattering spectrum exhibits the same behavior as that of the THz emission. We suggest that the field enhancement by localized surface plasmons induces more efficient THz emission or Raman scattering for the longer Si NWs. The photocurrent measured in a photoelectrochemical cell showed consistently the length dependence with a maximum value at the length of 5 μm.

Keywords

SiRaman spectroscopyphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-P13-06
Copyright
Copyright © Materials Research Society 2010

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References

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