Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T14:47:54.393Z Has data issue: false hasContentIssue false

Tensile Testing of Ultra-Thin-Film Materials Deposited on Polyimide for Mems Applications

Published online by Cambridge University Press:  10 February 2011

J.H. Tregilgas
Affiliation:
Texas Instruments Inc., Dallas TX, 75265, RTIS Texas Instruments Inc., Dallas TX, 75265
M. Strumpell
Affiliation:
Texas Instruments Inc., Dallas TX, 75265
Get access

Abstract

A newly developed approach to thin-film tensile testing has been utilized for evaluating ultra-thin-films of about 60-100 nm in thickness. Thin sputtered metal films deposited on 3.5 gm thick polyimide film substrates were tested using a Mesotronix nanotensiometer. Modifications to sample handling and zero strain calibration helped to improve testing reproducibility. The response of a thin-film metal was determined by subtracting the response of the polyimide carrier film from that of the metal-on-polyimide composite. Stress-strain curves for two amorphous alloys sputtered from Al-25 at% Ti and Nb-25 at% Al targets exhibited well-defined elastic regions followed by brittle behavior. The ultimate tensile strengths (UTS) were about 1200 MPa for the Al-Ti and 1700 MPa for the Nb-Al, both of which occurred near the elastic strain limit of about 2%. After recrystallization at 280°C for an hour, the Al-Ti film showed what appears to be an upper and lower yield point, in addition to strain hardening. Initial yielding occurred at a strain of about 1.2% and a stress of about 800 MPa, while the UTS of about 1000-1060 MPa occurs at strains as high as 9%. Stress relaxation measurements performed on both the amorphous and the recrystallized films showed lower values of stress relaxation at 1% strain compared to low alloy polycrystalline Al films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hornbeck, L.J., Proc. SPIE Vol. 3013, 27 (1997).Google Scholar
2 Hornbeck, L.J. and Nelson, W.E., OSA Technical Digest Series, Vol. 8, 107 (1988).Google Scholar
3 Douglass, M.R., Proc. IEEE Int. Reliability Physics Sym., 9 (1998).Google Scholar
4 Hornbeck, L.J., Proc. 16th International Display Research Conference, 67 (1996).Google Scholar
5 Digitial Light Processing (DLP) World Wide Web Site: http//www.ti.com/dlpGoogle Scholar
6 Kang, Y.S., Ho, P.S., Knipe, R. and Tregilgas, J., Mat. Res. Soc. Symp. Proc. 436, 35 (1997).Google Scholar
7 Kang, Y.S. and Ho, P.S., J. Electron. Mater. 26, 805 (1997).Google Scholar
8 Cottrell, A.H., Dislocations and Plastic Flow In Crystals, (Oxford University Press, London, 1953), p. 140.Google Scholar