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Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

Published online by Cambridge University Press:  22 February 2011

C.W. Cullen  and
J.C. Sturm
C.W. Cullen
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
J.C. Sturm
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
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Abstract

The infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 23
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1] Sturm, J. C., Schwartz, P. V., and Garone, P. M., Appl. Phys. Lett. 56, 961 (1990).CrossRefGoogle Scholar
[2] Sturm, J. C., Garone, P. M., and Schwartz, P. V., J. Appl. Phys., 69, 542 (1991).CrossRefGoogle Scholar
[3] Sturm, J. C. and Reaves, C. M., IEEE Trans. Electron Devices, 39, 81 (1992).CrossRefGoogle Scholar