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Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs

Published online by Cambridge University Press:  12 May 2015

Johannes Glaab ,
Christian Ploch ,
Rico Kelz ,
Christoph Stölmacker ,
Mickael Lapeyrade ,
Neysha Lobo Ploch ,
Jens Rass ,
Tim Kolbe ,
Sven Einfeldt  and
Frank Mehnke
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Johannes Glaab
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Christian Ploch
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Rico Kelz
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Christoph Stölmacker
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Mickael Lapeyrade
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Neysha Lobo Ploch
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Jens Rass
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Tim Kolbe
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Sven Einfeldt
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Frank Mehnke
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany
Christian Kuhn
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany
Tim Wernicke
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany
Markus Weyers
Affiliation:
Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany
Michael Kneissl
Affiliation:
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany
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Abstract

The reliability of InAlGaN multiple quantum well LEDs emitting around 308 nm has been investigated. The UV-B LEDs were stressed at constant current and current density, while the heat sink temperature was varied between 15°C and 80°C. The results reveal two different modes of the decrease of the optical power during aging. First, a fast reduction of the optical power within the first 100 h (mode 1) can be observed, followed by a slower degradation for operation times >100 h (mode 2). Mode 1 can be described as an initial degradation activation process which saturates after a certain time, whereas the second degradation mode can be described by a square-root time dependence of the optical power, suggesting a diffusion process to be involved. Both degradation modes are accompanied by changes of the I-V characteristic, particularly the reverse-bias leakage current and the drive voltage. Furthermore, the degradation behavior is strongly influenced by the temperature. Both, the maximum reduction of the optical power and the increase of the leakage current become stronger at higher temperatures.

Keywords

III-Vdevicesoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2102646
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Endruweit, A., Johnson, M.S., and Long, A.C., Polymer Composites 27, 119 (2006)CrossRefGoogle Scholar
Krutmann, J., Morita, A., Journal of Investigative Dermatology Symposium Proceedings 4, 70 (1999)CrossRefGoogle Scholar
Schreiner, M., Martínez-Abaigar, J., Glaab, J., Jansen, M., Optik & Photonik 9 – 2, 34 (2014)CrossRefGoogle Scholar
Gong, Z., Gaevski, M., Adivarahan, V., Sun, W., Shatalov, M., Asif Khan, M., Appl. Phys. Lett. 88, 121106 (2006)CrossRefGoogle Scholar
Meneghini, M., Barbisan, D., Rodighiero, L., Meneghesso, G., Zanoni, E., Appl. Phys. Lett. 97, 143506 (2010)CrossRefGoogle Scholar
Moe, C. G., Reed, M. L., Garrett, G. A., Sampath, A. V., Alexander, T., Shen, H., Wrabeck, M., Bilenko, Y., Shatalov, M., Yang, J., Sun, W., Deng, J., Gaska, R., Appl. Phys. Lett. 96, 213512 (2010)CrossRefGoogle Scholar
Liu, J., Wong, H., Siu, S. L., Kok, C. W., Filip, V., Microelect. Reliab. 52, 1636 (2012)CrossRefGoogle Scholar
F. Mehnke, Ch. Kuhn, J. Stellmach, T. Kolbe, N. Lobo Ploch, J. Rass, M.-A. Rothe, Ch. Reich, M. Ledentsov Jr., M. Pristovsek, T. Wernicke, M. Kneissl, J. Appl. Phys. (2015), accepted for publication Google Scholar
J. Rass, T. Kolbe, N. Lobo Ploch, T. Wernicke, F. Mehnke, Ch. Kuhn, J. Enslin, M. Guttmann, Ch. Reich, A. Mogilatenko, J. Glaab, Ch. Stölmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, M. Kneissl, Proc. of SPIE Vol. 9363, 93631K-1 (2015) Google Scholar
Lapeyrade, M., Muhin, A., Einfeldt, S., Zeimer, U., Mogalitenko, A., Weyers, M., Kneissl, M., Semicond. Sci. Technol. 28, 125015 (2013)CrossRefGoogle Scholar
Sawyer, S., Rumyantsev, S. L., Shur, M. S., Sol. St. Elect. 52, 968 (2008)CrossRefGoogle Scholar
Orita, K., Takigawa, S., Yuri, M., Tanaka, T., Meneghini, M., Trivellin, N., Trevisanello, L.-R., Zanoni, E., Meneghesso, G., Proc. Of IEEE Int. Reliability Physics Symposium 2009, 736 (2009)Google Scholar
Meneghini, M., Trevisanello, L., Zehnder, U., Meneghesso, G., Zanoni, E., Phys. Stat. Sol. (c) 5, 2250 (2008)CrossRefGoogle Scholar
Moon, S.-M., Kwak, J. S., Kor, J.. Phys. Soc. 55, 1128 (2009)Google Scholar
Moseley, M., Allerman, A., Crawford, M. H., Wierer, J. Jr., Smith, M. L., Armstrong, M., J. Appl. Phys. 117, 095301 (2015)CrossRefGoogle Scholar
Shan, Q., Meyaard, D. S., Dai, Q., Cho, J., Schubert, E. F., Son, J. K., Sone, Ch., Appl. Phys. Lett. 99, 253506 (2011)CrossRefGoogle Scholar
Pinos, A., Marcinkevicius, S., Yang, J., Gaska, R., Shatalov, M., Shur, M.S., J. Appl. Phys. 108, 093113 (2010)CrossRefGoogle Scholar
Meneghini, M., Trivellin, N., Trevisanello, L., Lunev, A., Yang, J., Bilenko, Y., Sun, W., Shatalov, M., Gaska, R., Zanoni, E., Meneghesso, G., Proc. Of IEEE Int. Reliability Physics Symposium 2008, 441 (2008)Google Scholar