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Temperature Dependent Cathodoluminescence Characterization of Ultraviolet Emitting Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

J.M. Fitz-Gerald ,
J.G. Hoekstra ,
R.K. Bansal ,
J.D. Fowlkes  and
P.D. Rack
J.M. Fitz-Gerald
Affiliation:
University of Virginia, Dept of Materials Science and Engineering, 116 Engineer's Way Charlottesville, VA 22904-4745
J.G. Hoekstra
Affiliation:
University of Virginia, Dept of Materials Science and Engineering, 116 Engineer's Way Charlottesville, VA 22904-4745
R.K. Bansal
Affiliation:
University of Virginia, Dept of Materials Science and Engineering, 116 Engineer's Way Charlottesville, VA 22904-4745
J.D. Fowlkes
Affiliation:
University of Tennessee, Department of Materials Science and Engineering, 603 Dougherty Hall, Knoxville, TN 37996-2200
P.D. Rack
Affiliation:
University of Tennessee, Department of Materials Science and Engineering, 603 Dougherty Hall, Knoxville, TN 37996-2200
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Abstract

Strontium sulfide (SrS) is known to have an indirect bandgap of ∼ 4.32 eV. When doped with tellurium (Te), ultraviolet emission occurs at 360 nm (for Tes singlet) and 400nm (for Tes- Tes dimers) due to radiative recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown as SrS-Te and SrSTe- SrS multi-layer structures on Si substrates. The Te doping was incorporated by conventional diffusion into the SrS films. Temperature dependent ultraviolet emission measurements were taken and will be discussed along with results from microstructural and chemical characterization techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y1.4
Copyright
Copyright © Materials Research Society 2003

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