Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-03T05:35:40.272Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of the Electrical Transport of Carbon Doped Gan

Published online by Cambridge University Press:  10 February 2011

Wim Geerts ,
J.D. MacKenzie ,
C.R. Abernathy ,
S.J Pearton  and
Thomas Schmiedel
Wim Geerts
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
J.D. MacKenzie
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
S.J Pearton
Affiliation:
Department of Materials Science and Engineering / NHMFL, University of Florida, Gainesville, FL32611, USA
Thomas Schmiedel
Affiliation:
National High Magnetic Field Laboratory, Tallahassee, FL32306, USA.
Get access

Abstract

The temperature dependence of the Hall voltage and resistivity of highly carbon doped GaN were measured. From the sign of the Hall voltage, the material appears to be p-type. Charge transport takes place in an impurity band and the valence band. The effective activation energy as estimated from the maximum in the temperature versus Hall voltage relation is 10–30 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 425
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Johnson, W.C., Parsons, J.P. and Crew, M.C., J. Phys. Chem. 36 (1932) 2651.Google Scholar
[2] Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn. J. Appl. Phys. 28 (1989) L2112.Google Scholar
[3] Nakamura, S., Mukai, T., and Seno, M., Jpn. J. Appl. Phys. 30 (1991) L1998.Google Scholar
[4] Nakamura, Shuji, Senoh, Masayuki, Nagahama, Shin-ichi, Iwasa, Naruhito, Yamada, Takao, Matsushita, Toshio, Kiyoku, Hiroyuki, and Sugimoto, Yasunobu, Jpn. J. Appl. Phys. 35 (1996) L74.Google Scholar
[5] Strite, S., Jpn. J. Appl. Phys. 33 (1994) L699.Google Scholar
[6] see for example Abernathy, C.R., Mat. Sci. Eng. Rep. R14 (1995) 203.Google Scholar
[7] Pankove, J.I., Hutchby, J.A., J. Appl. Phys. 47 (1976) 5387.Google Scholar
[8] Ogino, Toshio and Aoki, Masaharu, Jpn. J. Appl. Phys. 19 (1980) 2395 Google Scholar
[9] Kennedy, T.A., Glaser, E.R., Freitas, J.A. Jr.,, and Carlos, W.E., Khan, M. Asif, Wickenden, D.K., J. Electron. Mat. 24 (1995) 219.Google Scholar
[10] Abernathy, C.R., MacKenzie, J.D., and Pearton, S.J., Hobson, W.S., Appl. Phys. Lett. 66 (1995) 1969.Google Scholar
[11] Properties of group III-Nitrides, Gaskill, D.K., Rowland, L.B., and Doverspike, K., pp. 108, (edited by Edgar, James H., London, 1994).Google Scholar
[12] Pearton, S.J., Abernathy, C.R., Lee, J.W., Vartuli, C.B., MacKenzie, J.D., Ren, R., Wilson, R.G., Zavada, J.M., Shul, R.J. and Zolper, J.C., Mat. Res. Soc. Symp. Proc. 430 (1996).Google Scholar
[13] Pauw, L.J. van der, Philips Research Report 13 (1958) 1.Google Scholar
[14] Bush, G. and Labhart, H., Helv. Phys. Acta. 19 (1946) 463.Google Scholar
[15] Hung, C.S. and Gliessman, T.R., Phys. Rev. 79 (1950) 726.Google Scholar
[16] Electrical characterization of GaAs materials and devices, Look, David C. (John Wiley and sons, Chichester, 1989).Google Scholar
[17] Rode, D.L., Phys. Stat.. Sol. b 55 (1973) 687.Google Scholar
[18] Suzuki, Masakatsu and Uenoyama, Takeshi, to be published in Solid State Electronics 39 (1996).Google Scholar
[19] Molnar, R.J., Lei, T., and Moustakas, T.D., Appl. Phys. Lett. 62 (1993) 72.Google Scholar
[20] Geerts, Wim, MacKenzie, J.D., Abernathy, C.R., Pearton, S.J., and Schmiedel, Thomas, Electrical transport in p-GaN, n-InN and n-InGaN, submitted to Sol. State Electr.Google Scholar
[21] Saitoh, Motohiko, J. Phys. Soc. Jpn. 29 (1970) 1470.Google Scholar
[22] Shiba, Hiroyuki, Kanada, Kunishiko, Hasegawa, Hiroshi, and Fukuyama, Hidetoshi, J. Phys. Soc. Jpn. 30 (1971) 972.Google Scholar
[23] Fukuyama, Hidetoshi, Saitoh, Motohiko, Uemura, Yasutada, Shiba, Hiroyuki, J. Phys. Soc. Jpn. 28 (1970) 842.Google Scholar