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Temperature Dependence Of The Electrical Properties Of Epitaxial Caf2 Layers On Si(111) Summary Abstract

Published online by Cambridge University Press:  28 February 2011

R.W. Fathauer  and
L.J. Schowalter
R.W. Fathauer*
Affiliation:
General Electric Corporate Research and Development Center, Schenectady, NY 12301
L.J. Schowalter*
Affiliation:
General Electric Corporate Research and Development Center, Schenectady, NY 12301
*
Work carried out while a graduate student in the School of Electrical Engineering, Cornell University. Present address: Jet Propulsion Laboratory, Pasadena, CA 91109.
Present address: Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12181.
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Extract

CaF2 is an insulator with a number of attractive properties for epitaxial growth on Si1 Epitaxial CaF2 layers have been grown on Si(111) by Molecular Beam Epitaxy and are found to have smooth surfaces and a high degree of crystalline perfection.1 For applications such as a gate insulator in metal-insulator-semiconductor field-effect transistors or in silicon-on-insulator technology, the electrical properties of these layers are also critical.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 371
Copyright
Copyright © Materials Research Society 1987

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References

1. Schowalter, L.J., Fathauer, R.W., Goehner, R.P., Turner, L.G., DeBlois, R.W., Hashimoto, S., Peng, J.-L., Gibson, W.M., and Krusius, J.P., J. Appl. Phys. 58, 302 (1985).Google Scholar
2. Fathauer, R.W. and Schowalter, L.J., to be published in J. Electronic Materials (May, 1987).Google Scholar
3. Smith, T.P. III, Phillips, J.M., People, R., Gibson, J.M., Pfeiffer, L., and Stiles, P.J., in Materials Research Society Symposia Proceedings. Vol. 54. ed. by Nemanich, R.J., Ho, P.S., and Lau, S.S. (Materials Research Society, Pittsburgh, 1986), pp. 295–305.Google Scholar