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Temperature Dependence of Rapid Thermal Annealing of Silicon on Sapphire

Published online by Cambridge University Press:  28 February 2011

Eliezer Dovid Richmond ,
George Campisi  and
Mark Twigg
Eliezer Dovid Richmond
Affiliation:
Naval Research Laboratory, Code 6816, Washington D.C. 20375-5000
George Campisi
Affiliation:
Naval Research Laboratory, Code 6816, Washington D.C. 20375-5000
Mark Twigg
Affiliation:
GEO-Centers Inc., Suitland, MD 20748
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Abstract

The material improvement of silicon on sapphire by rapid thermal annealing (RTA) is investigated as a function of the maximum temperature during the RTA cycle. Dramatic improvement of the crystalline quality throughout the silicon epilayer occurs for the lowest RTA temperature used (1160°C). The dechanneled fraction at the surface, Xo = 0.033, for the highest temperature anneal, gives bulk-like silicon values. Thus, at the surface, the crystalline quality is like bulk silicon. For the higher temperature anneals, transmission electron microscopy reveals that only a few microtwins extend to the surface. The defect microstructure in the region of the silicon/sapphire interface is substantially reduced. The RTA results in Al autodoping on the order of 1017 cm-3. The strain in the silicon epilayer is the same both before and after the RTA. The defect elimination can be explained in terms of the motion of the incoherent boundaries of the microtwins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 377
Copyright
Copyright © Materials Research Society 1988

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