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Temperature Dependence of morphology of InP Films Grown by metalorganic molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

M.A. Cotta ,
R.A. Hamm ,
S.N.G. Chu ,
L.R. Harriott  and
H. Temkin
M.A. Cotta
Affiliation:
Unicamp, IFGW/DFA, CP 6165,13081 Campinas SP, Brazil
R.A. Hamm
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S.N.G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L.R. Harriott
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
H. Temkin
Affiliation:
Colorado State University, Fort Collins, CO 80523
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Abstract

Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular beam epitaxy. Below a minimum growth temperature, kinetic roughening is observed. At temperatures higher than smooth morphologies are obtained. From the dependence of on the substrate Misorientation, we estimate a value of ∼0.4–0.5eV for the Schwoebel barrier. At growth temperatures higher than we observe two types of defects: large oval defects related only to the initial conditions of the substrate surface and small defects with the density strongly dependent on the growth condition. Increasing temperature above or decreasing V/III ratio, results in increased density of these defects. In addition, their density increases with an activation energy that depends on the substrate Misorientation. The origin of the oval defects is attributed to non-stoichiometric, P-defficient, clusters on the growing surface, formed either by enhanced cracking of metalorganic s on the substrate due to the presence of contaminants or by a low V/III ratio used for growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 123
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

[1]- Fujiwara, K., Kanamoto, K., Ohta, Y.N., Tokuda, Y. and Nakayama, T., J. Cryst. Growth 80, 104 (1987)CrossRefGoogle Scholar
[2]- Chand, N. and Chu, S.N.G., J. Cryst. Growth 104, 485 (1990)Google Scholar
[3]- Chai, Y.G. and Chow, R., Appl. Phys. Lett. 38, 796 (1981)CrossRefGoogle Scholar
[4]- Morishita, Y., Maruno, S., Gotoda, M., Nomura, Y. and Ogata, H., J. Cryst. Growth 95, 176 (1989)CrossRefGoogle Scholar
[5]- Benchimol, J.L., Alaoni, F., Gao, Y., LeRoux, G., Rao, E.V.K. and Alexandre, F., J. Cryst. Growth 105, 135 (1990)Google Scholar
[6]- Cotta, M.A., Hamm, R.A., Staley, T.W., Chu, S.N.G., Harriott, L.R., Panish, M.B. and Temkin, H., Phys. Rev. Lett. 70, 4106 (1993)Google Scholar
[7]- Orr, B.G., private communications;Google Scholar
Johnson, M.D., Orme, C., Hunt, A.W., Graff, D., Sudijono, J., Sander, L.M. and Orr, B.G., unpublishedGoogle Scholar
[8]- Schwoebel, R.L. and Shipsey, E.J., J. Appl. Phys. 37, 3682 (1966).Google Scholar
[9]- Heller, E.J. and Lagally, M.G., Appl. Phys. Lett. 60, 2675 (1992)Google Scholar
[10]- Ohta, K., Kojima, T. and Nakagawa, T., J. Cryst. Growth 95, 71 (1989)CrossRefGoogle Scholar
[11]- Pashley, M.D., Haberern, K.W. and Gaines, J.M., Appl. Phys. Lett. 58, 406 (1991)CrossRefGoogle Scholar
[12]- Wang, Y.L., Feygenson, A., Hamm, R.A., Ritter, D., Weiner, J.S., Temkin, H. and Panish, M.B., Appl. Phys. Lett. 59, 443 (1991).Google Scholar
[13]- Hull, D. and Bacon, D.J., Introduction to Dislocations, 3rd. ed. (Pergamon Press, Great Britain, 1984), p. 62 Google Scholar