Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T19:41:30.686Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of Leakage Current in Segmented a-Si:H n-i-p Photodiodes

Published online by Cambridge University Press:  01 February 2011

Jeff Hsin Chang ,
Tsu Chiang Chuang ,
Yuri Vygranenko ,
Denis Striakhilev ,
Kyung Ho Kim ,
Arokia Nathan ,
Gregory Heiler  and
Timothy Tredwell
Jeff Hsin Chang
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Avenue West, Waterloo, N2L 3G1, Canada, 519-591-2988
Tsu Chiang Chuang
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Avenue West, Waterloo, N2L 3G1, Canada
Yuri Vygranenko
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Avenue West, Waterloo, N2L 3G1, Canada
Denis Striakhilev
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Avenue West, Waterloo, N2L 3G1, Canada
Kyung Ho Kim
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Avenue West, Waterloo, N2L 3G1, Canada
Arokia Nathan
Affiliation:
[email protected], London Centre for Nanotechnology, University College, London, WC1H OAH, United Kingdom
Gregory Heiler
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Timothy Tredwell
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Get access

Abstract

Hydrogenated amorphous silicon (a-Si:H) n-i-p photodiodes may be used as the pixel sensor element in large-area array imagers for medical diagnostics applications. The dark current level is an important parameter that dictates the performances of these types of pixelated imaging devices. Through measurements performed at different ambient temperatures, the leakage current components of segmented a-Si:H n-i-p photodiodes were extracted and analyzed. It was found that the central component of the reverse current depends exponentially on bias and temperature. The activation energy of this component is independent of bias. The peripheral component of reverse current exhibits linear bias dependence at temperatures up to 50°C, while the contribution of this component diminishes at high temperatures. The dependence of dark current components on bias and temperature could be described by compact analytical equations. The model of forward and reverse dark current characteristics in temperature range was implemented in Verilog-A hardware description language.

Keywords

sensoramorphousoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A19-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Street, R. A., in Technology and Applications of Amorphous Silicon, edited by Street, R. A., (Springer-Verlag, Heidelberg, 2000), p. 204.Google Scholar
2 Schiff, E. A., Street, R. A. and Weisfield, R. L., J. Non-Cryst. Solids 192–220, 1155 (1996).Google Scholar
3 Mulato, M., Hong, C. M. and Wagner, S., J. Electrochem. Soc. 150, G735 (2003).Google Scholar
4 Kramer, N. and Berkel, C. van, Appl. Phys. Lett. 64, 1129 (1994).Google Scholar
5 Vygranenko, Yu., Chang, J. H. and Nathan, A., Mater. Res. Soc. Symp. Proc. 862, A9.4.1 (2005).Google Scholar
6 Matsuura, H., Matsuda, A., Okushi, H. and Tanaka, K., J. Appl. Phys. 58, 1580 (1985).Google Scholar
7 Street, R. A., Hydrogenated Amorphous Silicon, (Cambridge University Press, Cambridge, 1991), p. 82.Google Scholar