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Temperature Dependence of a-Si:H Nip Diodes

Published online by Cambridge University Press:  21 February 2011

C. van Berkel ,
M. J. Powell  and
I. D. French
C. van Berkel
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
M. J. Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
I. D. French
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
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Abstract

We analyse the temperature dependence of the forward characteristics of a-Si:H nip diodes, which are characterised by a well defined exponential region at low bias and space charge limited current at higher bias. At each bias, the temperature dependence of the diodes shows a well defined activation energy and a linear dependence on bias exists for both the activation energy and exponential prefactor. We describe these phenomena with a first order temperature expansion of the diode quality factor n and present a physical interpretation in terms of electron and hole recombination in the i-layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 369
Copyright
Copyright © Materials Research Society 1991

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References

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