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Tem Study of the Annealing Behavior of Secondary Defects in L MeV Si Implanted Gaas

Published online by Cambridge University Press:  28 February 2011

Samuel Chen ,
G. Braunstein  and
S.-Tong Lee
Samuel Chen
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
G. Braunstein
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
S.-Tong Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
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Abstract

The annealing behavior of the lattice damage induced by 1 MeV Si+ implantation, at a dose of 3 x 1015 cm-2, into (100) GaAs has been examined by high resolution TEM, RBS and SIMS. The samples were annealed at temperatures ranging from 500 to 900ºC for 10 sec by rapid thermal annealing (RTA). Two types of defects, perfect and partial dislocation loops, lying in the GaAs {111} planes, were found throughout the as-implanted region, with the highest defect density concentrated in a buried band centered at 1 μm below the surface. After annealing at 500ºC, the total defect density showed little change, but the defects had become partial dislocation loops. With further increase in the annealing temperature, the surface region became increasingly defect free as the remaining individual dislocations increased in size, accompanied by a decrease in their number density. RBS dechanneling analysis showed that after annealing at 900ºC, the crystal lattice of the near-surface region had recovered to the level of a pristine GaAs. SIMS measurement of the Si profile showed little movement of the implant species upon RTA processing, and the Si peak position correlated well with the maximum defect density in the defect band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 233
Copyright
Copyright © Materials Research Society 1989

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