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TEM Observations of Silicon-on-Insulator Structures Formed by Nitrogen Implantation with Annealing at 1405°c.

Published online by Cambridge University Press:  28 February 2011

Cd. Meekison ,
G.R. Booker ,
K.J. Reeson ,
P.L.F. Hemment  and
G.K. Celler
Cd. Meekison
Affiliation:
Department of Metallurcrv and Science of Materials, University o.£ Oxford, Parks Road, Oxford 0X1 3PH, U.K.
G.R. Booker
Affiliation:
Department of Metallurcrv and Science of Materials, University o.£ Oxford, Parks Road, Oxford 0X1 3PH, U.K.
K.J. Reeson
Affiliation:
Department of Electronic and Electrical Encrineerina, universitv of Surrey, Guildford GU2 5XH, U.K.
P.L.F. Hemment
Affiliation:
Department of Electronic and Electrical Encrineerina, universitv of Surrey, Guildford GU2 5XH, U.K.
G.K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
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Abstract

(100) silicon waferSgWere-implanted with 200keV N ions to doses of 0.95 and 1.1x1018 cm-2 at a temperature of 520°C, and then annealed at 1405°C for 30 minutes. We report here observations of the resulting microstructures. A buried ɑ-Si3N4. layer and a good quality silicon overlayer were found. Evidence of cavities in the Si3N4. layer was found in the higher dose sample. Our results suggest that the cavities are associated with the delamination which sometimes occurs during annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 467
Copyright
Copyright © Materials Research Society 1988

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References

1 Zimmer, G. and Vocrt, H., IEEE Transactions on Electron Devices ED-30, 1515 (1983).Google Scholar
2 Hemment, P.L.F., Peart, R.F., Yao, M.F., Stephens, K.G., Chater, R.J., Kilner, J.A., Meekison, CD., Booker, G.R. and Arrowsmith, R.P., Appl. Phys. Lett. 46, 952 (1985).Google Scholar
3 Kaat, E.H. te and Belz, J., in Ion Beam Processes in Advanced Electronic Materials and Device Technology, edited by Siamon, F.H. (Mater. Res. Soc. Proc. 45, San Francisco, 1985). p. 329.Google Scholar
4 Nesbit, L., Stiffler, S., Slusser, G. and Vinton, H., J. Electrochem. Soc. 132, 2713 (1985).Google Scholar
5 Meekison, CD., Booker, G.R., Reeson, K.J., Hemment, P.L.F., Chater, R.J., Kilner, J.A. and Davis, J.R., submitted to J. Appl. Phys.Google Scholar
6 Charier, P.-H., Slawinski, C., Mao, B.-Y. and Lam, H.W., J. Appl. Phys. 61, 166 (1987).Google Scholar
7 Reeson, K.J., Hemment, P.L.F., Meekison, CD., Booker, G.R., Kilner, J.A., Chater, R.J., Davis, J.R. and Celler, G.K., Appl. Phys. Lett. 50, 1882 (1987).CrossRefGoogle Scholar
8 Celler, G.K., Hemment, P.L.F., West, K.W. and Gibson, J.M., Appl. Phvs. Lett. 48, 532 (1986).Google Scholar
9 Reeson, K.J., Nucl. Instr. and Meth. B19/20, 269 (1987).Google Scholar
10 Petruzzello, J., McGee, T.F., Frommer, M.H., Rumennik, V., Walters, P.A. and Chou, C.J., J. Appl. Phys. 58, 4605 (1985).Google Scholar
11 Meekison, CD., Booker, G.R., Reeson, K.J., Hemment, P.L.F., Chater, R.J., Kilner, J.A. and Arrowsmith, R.P., in Microscopy of Semiconducting- Materials 1985, edited by Cullis, A.G. and Holt, D.B. (Institute of Physics Conference Series No. 76, 1985) p. 489.Google Scholar