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Tem Observations of AG-TI Bilayers After Thermal Aging Treatment in a Reducing Ambient

Published online by Cambridge University Press:  10 February 2011

Adam I. Amali ,
J.W. Mayer ,
Yuxiao Zeng ,
Y.L. Zou ,
T.L. Alford ,
F. Deng  and
S.S. Lau
Adam I. Amali
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
J.W. Mayer
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704
Yuxiao Zeng
Affiliation:
Department of Chemical, Bio and Materials Engineering Center for Low Power Electronics, Arizona State University, Tempe, AZ 85287–6006
Y.L. Zou
Affiliation:
Department of Chemical, Bio and Materials Engineering Center for Low Power Electronics, Arizona State University, Tempe, AZ 85287–6006
T.L. Alford
Affiliation:
Department of Chemical, Bio and Materials Engineering Center for Low Power Electronics, Arizona State University, Tempe, AZ 85287–6006
F. Deng
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
S.S. Lau
Affiliation:
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093
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Abstract

Transmission electron microscopy (TEM) in both cross sectional and plan view is used to study the effect of annealing Ag-Ti bilayers deposited on SiO2/Si substrates in an NH3 ambient. The resulting structure, texture and grain size are investigated. Comparisons are made between films annealed at 400, 500 and 600 °C. Silver films show increasingly strong <111> texture with annealing temperature while exhibiting a bamboo-like grain structure at 600 °C. Considerable grain growth with lateral grain sizes of up to 5 times the thickness of the Ag film is observed at 600 °C. The grains typically extend through the Ag film thickness. The Ti/SiO2 interface uniformity and the absence of voids at the substrate surface are positive indicators of the role of titanium as a good adhesion promoter. At 600 °C, a uniform TiN encapsulation layer is observed on the Ag surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 197
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Seidel, Tom and Zhao, Bin, Mat. Res Soc. Symp. Proc, 427, 1995, p.3 Google Scholar
[2] Murarka, Shyam P. and Peckerar, Martin C., Electronic Materials Science and Technology. Academic Press, New York, 1989, p. 270 Special issues devoted to copper metallization for microelectronics [3–4]Google Scholar
[3] MRS Bulletin, 18(6), 1993; 19(8), 1994Google Scholar
[4] Thin Solid Films 262(1–2), 1995 Google Scholar
[5] Miyazaki, H., Hinode, K., Homma, Y. and Mukai, K., Jpn. J. Appl. Phys., 48, 1987, P.329 Google Scholar
[6] Alford, T. L., Adams, D., Laursen, T. and Manfred Ullrich, B., Appl. Phys. Lett. 68, 1996, p. 23 Google Scholar
[7] Laursen, T., Adams, D., Alford, T. L., Tu, K. -N., Deng, F., Morton, R. and Lau, S. S. Thin Solid films, 490, 1996, p. 355 Google Scholar
[8] Adams, Daniel, Alford, T. L., Laursen, T., Deng, F., Morton, R., and Lau, S. S., Mat. Res. Symp. Proc vol. 427, 1996, p. 337.Google Scholar