Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-02T20:47:40.417Z Has data issue: false hasContentIssue false
  • English
  • Français

TEM and HREM Studies of As-Grown Low-Temperature Molecular Beam Epitaxial In0.52Al0.48As/InP Heterolayers

Published online by Cambridge University Press:  15 February 2011

A. Claverie ,
Z. Liliental-Weber ,
P. Werner ,
W. Swider ,
P. K. Bhatiacharya ,
S. Gupta  and
G. Mourou
A. Claverie
Affiliation:
Centre d'Elaboration des Materiaux et d'Etudes Structurales, CNRS, BP 4347, 29 rue Marvig 31055 Toulouse Cedex, France
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, Berkeley CA 94720
P. Werner
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, Berkeley CA 94720
W. Swider
Affiliation:
Materials Science Division, Lawrence Berkeley Laboratory, Berkeley CA 94720
P. K. Bhatiacharya
Affiliation:
Dept. of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122
S. Gupta
Affiliation:
Dept. of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122
G. Mourou
Affiliation:
Dept. of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122
Get access

Abstract

Transmission and High Resolution Electron Microscopy have been used to study the dramatic changes in crystalline quality which occur in As-rich In0.52Al0.48As/InP layers when the growth temperature is lowered. We have found that for temperatures as low as 200°C and for a flux ratio of 20, the layers can be of high quality. For the lowest growth temperature of 150°C, pyramidal defects as well as hexagonal As grains are found which are characteristic of the breakdown of the monocrystalline growth in these layers. A mechanism for the formation of these defects is proposed based on their crystallographic structure. The fast photo response previously observed in these layers must be related to the presence of these defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 289
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Brown, A. S., Mishra, U. K., Chou, C. S., Hooper, C. E., Melendess, M.A., Thompson, M., Larson, L. E., Rosenbaum, E. S. and Delaney, M. J., IEEE Electron. Device Lett. EDL–10, 565 (1989).10.1109/55.43141Google Scholar
2.Gupta, S., Bhattacharya, P. K., Pamulapati, J. and Mourou, G., Appl. Phys. Lett. 57(15), 1543 (1990).10.1063/1.103347Google Scholar
3.Switch, F. W., Calawa, A. R., Chen, C. L., Manfra, M. and Mahoney, L. J., IEEE Electron. Device Lett. 9, 77 (1988).Google Scholar
4.Claverie, A., Yu, K. M., Liliental-Weber, Z., O'Keefe, M., Kilaas, R., Pamulapati, J. and Bhattacharya, P. K., submitted to Appl. Phys. Lett.Google Scholar
5.Claverie, A., Werner, P. and Liliental-Weber, Z., in preparation.Google Scholar
6.Claverie, A. and Liliental-Weber, Z., Proc. 49th EMSA Conf., 900 (1991); and Phil. Mag. in press.Google Scholar
7.Liliental-Weber, Z., Mat. Res. Soc. Symp. Proc., V 1987, 371 (1990).10.1557/PROC-198-371Google Scholar
8.Liliental-Weber, Z., Claverie, A., Washburn, J., Smith, F. and Calawa, R., Appl. Phys., A 53, 141 (1991).10.1007/BF00323874Google Scholar
9.Liliental-Weber, Z., Claverie, A., Werner, P. and Weber, E. R., Proc. XVIth Int. Conf. on Defects in Semiconductors, Bethlehem, PA, in press.Google Scholar
10.Claverie, A., Liliental-Weber, Z. and Weber, E. R., Proc. Int. Workshop on Physics of Semiconductor Devices, New Delhi (1991), submitted.Google Scholar