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Tantalum Nitride Thin Films Synthesized by Pulsed Nd:YAG Laser Deposition Method

Published online by Cambridge University Press:  10 February 2011

Hiroharu Kawasaki ,
Kazuya Doi. Jun Namba  and
Yoshiaki Suda
Hiroharu Kawasaki
Affiliation:
Department of Electrical Engineering. Sasebo National College of Technology, Okishin 1-1, Saseho. Nagasaki. 857-1193, Japan
Kazuya Doi. Jun Namba
Affiliation:
Department of Electrical Engineering. Sasebo National College of Technology, Okishin 1-1, Saseho. Nagasaki. 857-1193, Japan
Yoshiaki Suda
Affiliation:
Department of Electrical Engineering. Sasebo National College of Technology, Okishin 1-1, Saseho. Nagasaki. 857-1193, Japan
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Abstract

Tantalum nitride (TAN) films have been deposited on silicon substrates by using a pulsed Nd:YAG laser deposition method. Experimental results suggest that the substrate temperature is one of the most important parameters to prepare crystalline tantalum nitride thin films. Glancing-angle X-ray diffraction patterns show that the films deposited at Ts ≤ 300 °C are almost amorphous. and crystalline Ta6N2.57 films are obtained at Ts ≥ 500 °C. Grain size of the film increases with increasing substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 617: Symposium J – Laser-Solid Interactionsfor Materials Processing , 2000 , J3.22
Copyright
Copyright © Materials Research Society 2000

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