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Tantalum Nitride for Copper Diffusion Blocking on Thin Film (BiSb)2Te3

Published online by Cambridge University Press:  18 December 2012

H. H. Hsu ,
C. H. Cheng ,
C. K. Lin ,
K. Y. Chen  and
Y. L. Lin
H. H. Hsu
Affiliation:
Green Energy and Environment Research Lab., Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C.
C. H. Cheng*
Affiliation:
Department of Mechatronic Technology, National Taiwan Normal University, Taipei, Taiwan, R.O.C
C. K. Lin
Affiliation:
Green Energy and Environment Research Lab., Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C.
K. Y. Chen
Affiliation:
Green Energy and Environment Research Lab., Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C.
Y. L. Lin
Affiliation:
Green Energy and Environment Research Lab., Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C.
*
*Email: [email protected]
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Abstract

This study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te3thermoelectric layer.

Keywords

barrier layerthermoelectricthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1490: Symposium B – Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration , 2013 , pp. 145 - 150
Copyright
Copyright © Materials Research Society 2012 

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References

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