Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-24T18:48:46.270Z Has data issue: false hasContentIssue false
  • English
  • Français

Tailoring Electrical Conductivity and Mechanism of Carrier Transport in Zinc Oxide with Embedded Ag Layer

Published online by Cambridge University Press:  01 February 2011

Hauk Han ,
N D Theodore  and
Terry Alford
Hauk Han
Affiliation:
[email protected], Arizona state univerisity, School of Materials, Mill and University drive, Tempe, AZ, 85287, United States
N D Theodore
Affiliation:
[email protected], Freescale Semiconductor Inc, Tempe, AZ, 85284, United States
Terry Alford
Affiliation:
[email protected], Arizona State University, School of Materials and Flexible Display Center at ASU, Tempe, AZ, 85287, United States
Get access

Abstract

The effects of an embedded silver layer on the electrical properties of zinc oxide (ZnO) / silver (Ag)/ zinc oxide (ZnO) layered composite structures on polymer substrates have been investigated. We have engineered transparent conducting oxide structures with greatly improved conductivity. Electrical properties are correlated with Ag thickness. Film thicknesses were determined using Rutherford backscattering spectrometry. Hall effect, 4-point probe, and UV-Vis spectrophotometer analyses were used to characterize electrical and optical properties. The results show that carrier concentration, mobility, and conductivity increase with Ag thickness. Increasing Ag thickness from 8 to 14 nm enhances sheet resistance and resistivity by six orders of magnitude. We describe of the influence of Ag thickness on electrical properties of the ZnO/Ag/ZnO composite and propose a conduction mechanism for this system.

Keywords

transparent conductorthin filmelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I05-15
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Han, H., Adams, D., Mayer, J. W. and Alford, T. L. J. Appl. Phys. 98, 083705 (2005).Google Scholar
2. Lewis, J., Grego, S., Chalamala, B., Vick, E., and Temple, D., Appl. Phys. Lett. 85, 3450 (2000).Google Scholar
3. Sahu, D. R. and Huang, J-L., Thin Solid Films 515, 876 (2006).Google Scholar
4. Milnes, A. G. and Feucht, D. L. Heterojunciton and Metal-Semiconductor Junctions (Academic press, New York and London, 1972).Google Scholar
5. Yadav, H. K. Sreenivas, K., and Gupta, V., Appl. Phys. Lett. 90, 172113 (2007).Google Scholar
6. Singh, A. V. Mehra, R. M. Buthrath, N., Wakahara, A., and Yoshida, A., J. Appl. Phys. 90, 5661 (2001).Google Scholar
7. Kim, H., Gilmore, C. M. Horwitz, J. S. Pique, A., Murata, H., Kushto, G. P. Schlaf, R., Kafafi, Z. H., and Chrisey, D. B. Appl. Phys. Lett. 76, 259 (2000).Google Scholar
8. Kim, H. J. Park, Y. R. Appl. Phys. Lett. 78, 475 (2001).Google Scholar