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Synthesis of SiC on Si by Seeded Supersonic Beams of Fullerenes

Published online by Cambridge University Press:  10 February 2011

G. Ciullo ,
F. Biasioli ,
A. Podestá ,
P. Milani ,
T. Toccoli  and
S. Iannotta
G. Ciullo
Affiliation:
CeFSA CNR-ITC Centro di Fisica degli Stati Aggregati, Via Sommarive 18, 38050 Povo di Trento (Italy)
F. Biasioli
Affiliation:
CeFSA CNR-ITC Centro di Fisica degli Stati Aggregati, Via Sommarive 18, 38050 Povo di Trento (Italy)
A. Podestá
Affiliation:
INFM Dipartimento di Fisica, Via Celoria 16, 20133 Milano (Italy)
P. Milani
Affiliation:
INFM Dipartimento di Fisica, Via Celoria 16, 20133 Milano (Italy)
T. Toccoli
Affiliation:
CeFSA CNR-ITC Centro di Fisica degli Stati Aggregati, Via Sommarive 18, 38050 Povo di Trento (Italy)
S. Iannotta*
Affiliation:
CeFSA CNR-ITC Centro di Fisica degli Stati Aggregati, Via Sommarive 18, 38050 Povo di Trento (Italy)
*
♣tel.: ++43 0461 314 251, [email protected]
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Abstract

A well characterized C60 supersonic seeded beam has been used to synthesize SiC films on Si (111) 7×7. The control of beam parameters such as energy and flux distributions is shown to be important to improve quality of films in terms of morphology, defect density and structure. We demonstrate that a kinetic energy of a few eV of the C60 precursor is enough to induce carbidization at moderate substrate temperature. Kinetic energy activated SiC formation at 750°C is achieved with a strong reduction of the dimensions and density of defects. The films show a reduced roughness of about 2.5 nm (root mean square).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 257
Copyright
Copyright © Materials Research Society 2000

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