Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-02T18:37:37.094Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Si1-xGex-on-Insulator by 74Ge+ Ion Implantation in a Simox Substrate

Published online by Cambridge University Press:  22 February 2011

C.J. Patel ,
C.D. Marsh ,
U. Magnusson ,
C. Jeynes ,
M. Ostling ,
H NorströM ,
G.R. Booker  and
J.B. Butcher
C.J. Patel
Affiliation:
Middlesex University, Microelectronics Centre, Bounds Green Road, London, UK
C.D. Marsh
Affiliation:
University of Oxford, Dept. of Materials, Parks Road, Oxford, UK
U. Magnusson
Affiliation:
Industriellt Mikroelektronik Centrum, Isafjordsgatan 22, S-164 21 Kista, Sweden
C. Jeynes
Affiliation:
University of Surrey, Dept. of Elect. & Elec. Eng. Guildford, Surrey, UK
M. Ostling
Affiliation:
Royal Institute of Technology, Electrum 229, S-164 28 Kista, Sweden
H NorströM
Affiliation:
Industriellt Mikroelektronik Centrum, Isafjordsgatan 22, S-164 21 Kista, Sweden
G.R. Booker
Affiliation:
University of Oxford, Dept. of Materials, Parks Road, Oxford, UK
J.B. Butcher
Affiliation:
Middlesex University, Microelectronics Centre, Bounds Green Road, London, UK
Get access

Abstract

A single crystalline Si1-xGex overlayer on insulator is realised by the implantation of germanium into a SIMOX (Separation by IMplantation of OXygen) substrate. Two SIMOX samples were implanted with 74Ge+ at elevated temperature (≈600°C), and subsequently annealed at different temperatures and anneal ambients. The microstructure, stoichiometry, and conductivity of the Si1-xGex over-layer were studied using transmission electron microscopy, Rutherford backscattering spectrometry/ion channelling and two-probe conductivity measurements. As a result of lattice reordering after final heat treatment, and despite high defect density observed in the XTEM microstructure, the measured conductivity of the over-layer is higher than of the starting SIMOX material. These results suggest a possibility of band-gap engineering by synthesis of Si1-xGex-on-insulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 825
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Herring, C. and Vogt, E., Phys. Rev. 101, 944, (1956).Google Scholar
2 Hincley, J.M. and Singh, J., Phys. Rev. B41, 2912, (1990).Google Scholar
3 Selvakumar, C.R. and Hecht, B., IEEE Electron Dev. Lett. 12, 444 (1991).Google Scholar
4 Fukami, A., Shoji, K., Nagano, T., Tokuyama, T., and Yang, C.Y., Microelectron. Eng. 15, 15 (1991).Google Scholar
5 Grahn, K., Xia, Z., Kuivalainen, P., Karlsteen, M., and Willander, M., Electron. Letts. 29 (18), 1621, (1993).Google Scholar
6 Turan, R. and Finstad, T.G., Semicond. Sci. Technol. 7, 75 (1992).Google Scholar
7 Srivatsa, A.R., Sharan, S., Holland, O.W., and Narayan, J., J. Appl. Phys. 65, 4028 (1989).Google Scholar