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Synthesis of Samarium Oxide Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

Dongfang Yang  and
Lijue Xue
Dongfang Yang
Affiliation:
Integrated Manufacturing Technologies Institute, National Research Council Canada 800 Collip Circle, London, Ontario, Canada N6G 4X8
Lijue Xue
Affiliation:
Integrated Manufacturing Technologies Institute, National Research Council Canada 800 Collip Circle, London, Ontario, Canada N6G 4X8
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Abstract

Uniform Samarium oxide (Sm203) films were grown on 75-mm diameter silicon wafers by the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate an Sm2O3 target in an oxygen pressure of 30 mTorr. The crystal structure, surface morphology and optical properties of Sm2O3 films deposited at a temperature range of 25∼680°C were determined by XRD, FE-SEM, and spectra reflectance respectively. Monoclinic structure was the predominant phase for Sm2O3 films deposited at temperatures of 680°C and 400°C. Amorphous or partially crystallized amorphous phase was observed at deposition temperatures of 25°C and 200°C. The Sm2O3 film deposited at 680°C is very dense, while films deposited at lower temperatures have higher porosity. The values of index of refraction, n, and extinction coefficient, k, at λ = 633 nm are 1.867 and 0.0660, respectively, for the 680°C film, and are in a range of 1.5∼1.6 and 0.01∼0.04 respectively for films deposited at lower temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y1.3
Copyright
Copyright © Materials Research Society 2003

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References

1.see, for example: http:/public.itrs.net/Files/2001ITRS.Google Scholar
2. Hubbard, K. J. and Schlom, D. G., J. Mater. Res. 11 2757 (1996).Google Scholar
3. Robertson, J., MRS Bull. 27 217 (2002).Google Scholar
4. Schlom, D. G. and Haeni, J. H., MRS Bull. 27 198 (2002).Google Scholar
5. Kwo, J., Hong, M., Kortan, A. R., Queeney, K. T., Chabal, Y. J., Mannaerts, J. P., Boone, T., Krajewski, J. J., Sergent, A. M. and Rosamilia, J. M., Appl. Phys. Lett. 77 130 (2000).Google Scholar
6. Pal, S., Ray, S. K., Chakraborty, B. K., Lahiri, S. K. and Bose, D. N., J. Appl. Phys. 90 4103 (2001).Google Scholar
7. Boughaba, S., Sproule, G. I., McCaffrey, J. P., Islam, M. and Graham, M. J., Thin Solid Films, 358 (2000) 104–113.Google Scholar
8. Medenbach, O., Dettmar, D., Shannon, R. D., Fischer, R. X. and Yen, W. M., J. Opt. A: Pure Appl. Opt. 3 174 (2001).Google Scholar
9. Sze, S. M., Physics of Semiconductor Devices, Wiley, N.Y. 2nd edition, 1981, p 67.Google Scholar