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Synthesis of Magnetic Nanoparticles by Sputtering

Published online by Cambridge University Press:  26 February 2011

Mai Miyata
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 604-8501, Japan
Kyosuke Kishida
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
Katsushi Tanaka
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
Haruyuki Inui
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
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Abstract

The influence of experimental condition on morphology of FePt and Sm-Co nanoparticles synthesized by sputtering in a relatively high gas pressure has been studied. The sputtering apparatus is equipped with an annealing furnace that enables pre-deposition annealing of the nanoparticles. The effect of the annealing temperature on the ordering to the L10 FePt nanoparticles was also investigated. The morphology of the particles depends on a gas pressure and gas flow rate, but the sensitivity to experimental condition differs between FePt and Sm-Co. The morphology and domain structure of FePt nanoparticle are relatively the same in a wide range of experimental condition, whereas those of Sm-Co nanoparticle are significantly changed by variation of a gas pressure. FePt nanoparticles annealed in the annealing furnace prior to their deposition onto the substrate have the ordered L10 phase, which has an advantage for producing a magnetic recording media.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Weller, D, and Moser, A, IEEE Trans. Mag. 35, 4423 (1999)10.1109/20.809134Google Scholar
2. Weller, D., Moser, A., Folks, L., Best, M. E., Lee, W., Toney, M. F., Schwickert, M., Thiele, J. U., and Doerner, M. F., IEEE Trans. Mag. 36, 10 (2000)10.1109/20.824418Google Scholar
3. Harrell, J. W., Wang, S., Nikles, D. E., and Chen, M., Apply. Phys. Lett. 79, 4393 (2001)10.1063/1.1427751Google Scholar
4. Dai, Z. R., Sun, S., and Wang, Z. L., Nano Lett. 1, 443 (2001)10.1021/nl0100421Google Scholar
5. Dai, Z. R., Sun, S., and Wang, Z. L., Surf. Sci. 505, 325 (2002)10.1016/S0039-6028(02)01384-5Google Scholar
6. Zeng, H., Sun, S., Vedantam, T. S., Liu, J. P., Dai, Z. R., and Wang, Z. L., Apply. Phys. Lett. 80, 2583 (2001)10.1063/1.1467976Google Scholar
7. Stappert, S., Rellinghaus, B., Acet, M., and Wassermann, E. F., J. Crystal Growth 252, 440450 (2003)10.1016/S0022-0248(03)00935-7Google Scholar
8. Sun, S., Murray, C. B., Weller, D., Folks, L., and Moser, A., Science 287, 1989 (2000)10.1126/science.287.5460.1989Google Scholar