Hostname: page-component-669899f699-swprf Total loading time: 0 Render date: 2025-04-26T16:42:29.776Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis and Characterization of Nanosized Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

S. Klein ,
M. Winterer  and
H. Hahn
S. Klein
Affiliation:
Darmstadt University of Technology, Materials Science Department, Thin Films Division 64287 Darmstadt, Petersenstrasse 23, Germany
M. Winterer
Affiliation:
Darmstadt University of Technology, Materials Science Department, Thin Films Division 64287 Darmstadt, Petersenstrasse 23, Germany
H. Hahn
Affiliation:
Darmstadt University of Technology, Materials Science Department, Thin Films Division 64287 Darmstadt, Petersenstrasse 23, Germany
Get access

Abstract

Nanosized silicon carbide powders are synthesized by the Chemical Vapor Synthesis (CVS). Grain and particle sizes are measured by XRD and BET. Agglomeration, crystallinity and the chemical composition of the SiC samples are investigated as a function of storage conditions and the CVS process parameters: precursor material, synthesis temperature and reactor length. Grain and particle sizes below 10 nm are observed in all samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 501: Symposium FF – Surface Controlled Nanoscale Materials for High-Added… , 1997 , 27
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Harris, G. L. (ed.), Properties of Silicon Carbide, Inspec, London 1995 Google Scholar
2. Liethschmidt, K., “Silicon Carbide”, in Ullmann's Encyclopedia of Industrial Chemistry, Volume A23, 1993, 749, Somiya, S., and Inomata, Y. (eds.), Silicon Carbide Ceramics 1 Elsevier Barking 1991Google Scholar
3. “Silicon Carbide Electronic Materials and Devices”, in MRS Bulletin 3/1997 Google Scholar
4. Valßen, R., Kaiser, A., Förster, J., Buchkremer, H.P., Stöver, D., J. Mat. Sci. 31, 3623 (1996)Google Scholar
5. Valßen, R., Stöver, D., J. Mat. Sci. 29, 3791 (1994)Google Scholar
6. Hinds, W.C., chapter 4: Physical and Chemical Changes in the Particulate Phase, in Willeke, K. and Baron, P.A. (eds.), Aerosol Measurement - Principles, Techniquies and Applications, Van Nostrand Reinhold, New York 1993, p.41 Google Scholar
7. Klein, S., Winterer, M., Hahn, H., submitted to Chemical Vapor Deposition 1997 Google Scholar
8. Chang, W., Skandan, G., Danforth, S.C., Kear, B.H., Hahn, H., Nanostruct. Mat. 4, 507 (1994)Google Scholar
9. Girka, A.I., Kuleshin, V.A., Mokrushin, A.D., Mokhov, E.N., Svirida, S.V., Shichkin, A.V., Soy. Phys. Semiconductors 23 (1989), 790 Google Scholar