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Synthesis and Characterization of Methyltriethoxysilane Based Low Permittivity (Low-k) Polymeric Dielectrics

Published online by Cambridge University Press:  01 February 2011

Z. Gu ,
R. Jeyakumar ,
S. Sivoththaman  and
A. Nathan
Z. Gu
Affiliation:
(Chemical Engineering) University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada.
R. Jeyakumar
Affiliation:
Department of Electrical and Computer Engineering
S. Sivoththaman
Affiliation:
Department of Electrical and Computer Engineering
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Abstract

A low-permittivity (low-k) polymeric material has been synthesized using methyltriethoxysilane as base material. The films were reproduceably deposited, by spin-coating on Si wafers with a uniform thickness in the range of 0.3-0.5μm depending on speed. The parameters for spin coating (spin speed and spin time etc.,) have been optimized. The effects of various curing conditions on the structural and dielectric properties have been studied. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. Test structures on silicon were fabricated to measure the dielectric constant (k) of the material. The values of k were found to be in the range of 2.6-1.2 for annealing temperatures 150°C-450°C. The dielectric constant decreases as the curing temperature increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B7.23
Copyright
Copyright © Materials Research Society 2002

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