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Synthesis and Characterization of Boron-Doped Single Crystal Diamond

Published online by Cambridge University Press:  25 January 2013

Sunil K. Karna ,
D. V. Martyshkin ,
Yogesh K. Vohra  and
Samuel T. Weir
Sunil K. Karna
Affiliation:
Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294, USA
D. V. Martyshkin
Affiliation:
Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294, USA
Yogesh K. Vohra
Affiliation:
Department of Physics, University of Alabama at Birmingham, Birmingham, AL 35294, USA
Samuel T. Weir
Affiliation:
L-041, Lawrence Livermore National Lab., Livermore, CA 94550, USA
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Abstract

The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content had been observed by atomic force microscopy. Four point probe electrical measurement indicated that different conduction mechanisms are operating in various temperature regions for these semiconducting films.

Keywords

chemical vapor deposition (CVD) (deposition)semiconductingdiamond
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1519: Symposium MM – Materials under Extreme Environments , 2013 , mrsf12-1519-mm03-27
Copyright
Copyright © Materials Research Society 2013

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