Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-24T12:08:56.986Z Has data issue: false hasContentIssue false
  • English
  • Français

Synchrotron X-Ray Scattering of (Ba0.5Sr0.5)TiO3 Thin Films Epitaxially Grown on MgO(100)

Published online by Cambridge University Press:  10 February 2011

Sang S. Kim  and
Jung H. Je
Sang S. Kim
Affiliation:
Dept. of Materials Science & Metallurgical Engineering, Sunchon National University, Sunchon 540-742, South Korea
Jung H. Je
Affiliation:
Dept. of Materials Science & Engineering, Pohang University of Science & Technology, Pohang 790-784, South Korea
Get access

Abstract

((Ba0.5Sr 0.5)TiO3 thin films of two different thicknesses (∼ 250 Å and ∼ 1330 Å) epitaxially prepared on MgO(100) using pulsed laser deposition were studied by synchrotron x-ray scattering measurements. The film initially grew on MgO(100) with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became rougher significantly, but the interface between the film and the substrate did not change so much. In the early stage, the film was highly strained in a tetragonal structure with the longer axis parallel to the surface normal direction. As the growth proceeded further, it was mostly relaxed to a cubic structure with the lattice parameter of the bulk value and the mosaic distribution improved significantly in both the in-plane and the out-of-plane directions. The thinner film showed only one domain limited mainly by the film thickness, but the thicker film exhibited three domains along the surface normal direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 53
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kim, T. S., Kim, C. H., and Oh, M. H., J. Appl. Phys. 75, 7998 (1994).Google Scholar
2. Jia, Q. X., Wu, X. D., Foltyn, S. R., and Tiwari, P., Appl. Phys. Lett. 66, 2197 (1995).Google Scholar
3. Jang, S.I., Choi, B. C., and Jang, H. M., J. Mater. Res. 12, 1327 (1997).Google Scholar
4. Kim, S. and Baik, S., J. Vac. Sci. Technol. A(13), 95 (1995).Google Scholar
5. Je, J. H. and Noh, D. Y., J. Appl. Phys. 80, 2791 (1996).Google Scholar
6. Je, J. H., Kang, T. S., and Noh, D. Y., J. Appl. Phys. 81, 1 (1997)Google Scholar
7. Shinha, S. K., Sanyal, M. K., Satija, S. K., Majkzak, C. F., Neumann, D. A., Homma, H., Szpala, S., Gibaud, A., and Morkoc, H., Physica B 198, 72 (1994)Google Scholar
8. McQuarrie, M., J. Am. Ceram. Soc. 38, 444 (1995).Google Scholar
9. Warren, B. E., X-ray Diffraction (Addison-Wesley, Reading, MA, 1969), Chap. 13.Google Scholar