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Synchrotron Radiation and Conventional X-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

Mario El Kazzi ,
Clement Merckling ,
Genevieve Grenet ,
Guillaume Saint-Girons ,
Mathieu Silly ,
Fausto Sirotti  and
Guy Hollinger
Mario El Kazzi
Affiliation:
[email protected], Societé Civile Synchrotron Soleil, Gif-sur-Yvette, France
Clement Merckling
Affiliation:
[email protected], IMEC, Leuven, Belgium
Genevieve Grenet
Affiliation:
[email protected], INL, Ecole Centrale de Lyon, Lyon, France
Guillaume Saint-Girons
Affiliation:
[email protected], INL, Ecole Centrale de Lyon, Lyon, France
Mathieu Silly
Affiliation:
[email protected], Societé Civile Synchrotron Soleil, Gif-sur-Yvette, France
Fausto Sirotti
Affiliation:
[email protected], Societé Civile Synchrotron Soleil, Gif-sur-Yvette, France
Guy Hollinger
Affiliation:
[email protected], INL, Ecole Centrale de Lyon, Lyon, France
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Abstract

High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O3(111)//[100]Si(001), [11-2]Al2O3(111)//[010]Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).

Keywords

x-ray photoelectron spectroscopy (XPS)thin filmphotoemission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C08-05
Copyright
Copyright © Materials Research Society 2009

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