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Surface-particle interactions in the chemical mechanical polishing process

Published online by Cambridge University Press:  10 February 2011

J. J. Adler ,
Y. I. Rabinovich ,
R. K. Singh  and
B. M. Moudgil
J. J. Adler
Affiliation:
Department of Materials Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, FL 32611
Y. I. Rabinovich
Affiliation:
Department of Materials Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, FL 32611
R. K. Singh
Affiliation:
Department of Materials Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, FL 32611
B. M. Moudgil
Affiliation:
Department of Materials Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, FL 32611
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Abstract

Chemical mechanical polishing (CMP) is a critical step in the fabrication of integrated circuits. Each layer of deposited material must be planarized before the next layer of circuitry can be formed. In CMP, a chemically active solution is used to modify the substrate so that a particulate abrasive may polish more efficiently. Modification of the surface often requires high oxidizer concentrations or pH extremes. Under these circumstances the stability of the polishing slurry and prevention of particulate attachment to the substrate is a difficult problem. In this study, atomic force microscopy (AFM) has been used to directly measure the forces between surfaces that simulate those in CMP. Initial investigation has focused on modeling the polishing of tungsten interconnect material by alumina slurries at acidic pH and evaluating the role surfactants can play in the stabilization of the polishing slurry and CMP processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 501: Symposium FF – Surface Controlled Nanoscale Materials for High-Added… , 1997 , 387
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Steigerwald, J.M., Murarka, S.P.. Gutmann, R.J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, New York, 1997, pp. 181–208.Google Scholar
2. Myers, T.L., Fury, M.A., Krusell, W.C., Solid State Technology, pp. 59–64, Oct. 1995.Google Scholar
3. Bergström, L., Shinozaki, K., Tomiyama, H., Mizutani, N., J. Am. Ceram. Soc., 80 [2] pp. 291–300, 1997.Google Scholar
4. Kékicheff, P., Christenson, H.K., Ninham, B.W., Colloids Surf., 40, pp. 31–41, 1989.Google Scholar
5. Rutland, M.W. and Parker, J.L., Langmuir, 10, pp. 1110–1121, 1994.Google Scholar
6. Shah, D.O., Free, M., unpublished dataGoogle Scholar
7. Manne, S., Gaub, H.E., Science, 270, pp. 1480–1482, Dec. 1995 Google Scholar
8. Rabinovich, Y.I., Yoon, R.-H., Langmuir, 9, pp. 1168, 1993.Google Scholar