Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-08T08:17:09.188Z Has data issue: false hasContentIssue false

Surface Stability and Flow Characteristics of BPSG Film by N2O Plasma Treatment

Published online by Cambridge University Press:  25 February 2011

C.G. Kim
Affiliation:
SamSung Electronics Co, R&D Center, Suwon PO Box #107, Kyungki-Do, Korea
H.S. Lee
Affiliation:
SamSung Electronics Co, R&D Center, Suwon PO Box #107, Kyungki-Do, Korea
Y.C. Ahn
Affiliation:
SamSung Electronics Co, R&D Center, Suwon PO Box #107, Kyungki-Do, Korea
U.I. Chung
Affiliation:
SamSung Electronics Co, R&D Center, Suwon PO Box #107, Kyungki-Do, Korea
J.K. Lee
Affiliation:
SamSung Electronics Co, R&D Center, Suwon PO Box #107, Kyungki-Do, Korea
J.G. Lee
Affiliation:
SamSung Electronics Co, R&D Center, Suwon PO Box #107, Kyungki-Do, Korea
Get access

Abstract

BPSG films show good flow characteristics with the increase of boron and phosphorus concentration. As–deposited BPSG films with high boron and phosphorus concentration, however, have a dopant instability which results in film bursts, cracks, and precipitates, due to water absorption. Elimination of dopant instabilities of BPSG films by N2O plasma treatment is investigated. Film structure, composition and flow properties are evaluated by FT-IR, SIMS, and SEM, respectively. Dopant stability is examined after H2SO4 boiling. After H2SO4 boiling without N2O plasma treatment, BPSG films with high boron and phosphorus concentration show poor flow characteristics. Boron and phosphorus are leached out of the BPSG films by reaction with absorbed water during the H2SO4 boil. N2O plasma treatment results in a thin surface layer composed of Si-O-B bonds. These bonds do not dissolve in water. It is proposed that the thin layer consisting of Si-O-B bonds prevents the penetration of water into BPSG film during H2SO4 boiling.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Malik, F. and Solanki, R., Thin Solid Films 193/194, 1030 (1990)Google Scholar
2 Armstrong, W.E. and tolliver, D.L, J.Electrochem. Soc.,2,307(1974)CrossRefGoogle Scholar
3 Kern, W. and Kurylo, W.A., and Tino, D.J., RCA Rev.,45,117(1985)Google Scholar
4 Williams, D.S. and Dein, E.D., J.Electrochen. Soc., 134, 657 (1987)Google Scholar
5 Doremus, R.H, Glass Science, (John Wiley & Sons, Inc., New York, 1973), p.23 Google Scholar