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Surface Oxidation Processes in Compound Semiconductors Studied by Profile Imaging

Published online by Cambridge University Press:  21 February 2011

Ping Lu  and
David J. Smith
Ping Lu
Affiliation:
Dept. of Physics and Center for Solid State Science, Arizona State University, Tempe, AZ 85287
David J. Smith
Affiliation:
Dept. of Physics and Center for Solid State Science, Arizona State University, Tempe, AZ 85287
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Abstract

The profile imaging technique has been used to study the oxidation of ZnTe and InP surfaces induced by insitu reaction due to the electron beam of the microscope and by exsitu heating in air. For both materials, insitu reaction with the electron beam resulted in desorption of the anion species and the formation of the metal oxide. The observation of In metal particles, and the fact that the rate of formation of In2O3 was substantially reduced by an improvement of the vacuum near the specimen region, suggested that the presence of oxygen is not involved in the desorption process. The exsitu heating of ZnTe up to 260°C in air resulted in crystals of ZnO and Te metal, generally in a layered surface region with the sequence of ZnTe/Te/ZnO. The large Te crystals usually had an epitaxial relationship with the bulk ZnTe but the small ZnO crystals had random orientations. The exsitu heating of InP to 380°C in air only gave rise to small crystals of In2o3 in random orientations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 75
Copyright
Copyright © Materials Research Society 1989

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References

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