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Surface Morphology of Gallium Phosphide Deposited by Chemical Beam Epitaxy and Interrupted Cycle Chemical Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

James T. Kelliher ,
John T. Thornton ,
Phillip E. Russell  and
Klaus J. Bachmann
James T. Kelliher
Affiliation:
North Carolina State University, Raleigh, NC.
John T. Thornton
Affiliation:
North Carolina State University, Raleigh, NC.
Phillip E. Russell
Affiliation:
North Carolina State University, Raleigh, NC.
Klaus J. Bachmann
Affiliation:
North Carolina State University, Raleigh, NC.
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Abstract

In this paper, we describe the relation of the surface morphology of GaP grown by chemical beam epitaxy (CBE) and interrupted cycle chemical beam epitaxy (ICCBE) to the deposition conditions on (001) Si. The films were examined with scanning electron Microscopy (SEM) and atomic force Microscopy (AFM). Initial stages of the films grown by CBE using triethylgallium (TEG) and tertiarybutylphosphine (TBP) examined by SEM reveals in addition to GaP nuclei at 10–100 nm scale, whiskers of typically 100 nm diameter at their bases. AFM Measurements yield an average height of these whiskers of 50 nm that self-terminate and are incorporated into the GaP film upon further growth without loss of epitaxy as determined by x-ray diffraction. Nevertheless, the whiskers are a possible source for defects and surface roughness in thicker films. Whisker formation can be suppressed under conditions of ICCBE by the addition of hydrogen flow, sealing the silicon surface by a smooth thin film of GaP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 597
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Kelliher, J.T. and Bachmann, K.J., in Chemical Perspectives of microelectronic materials III edited by Abernathy, C.R., Bates, C.W., Bohling, D.A. and Hobson, W.S. (Mat. Res. Soc. Proc. 282, Pittsburgh, PA, 1992) pp. 51–56.Google Scholar
2. Barns, R. L. and Ellis, W. C., Journal of Applied Physics 36 (7), 2296 (1965).Google Scholar
3. Li, S. H., Buchan, N. I., Larsen, C. A., and Stringfellow, G. B., Journal of Crystal Growth 96, 906 (1989).CrossRefGoogle Scholar
4. Dietz, N., Habermehl, S., Kelliher, J.T., Lucovsky, G., and Bachmann, K.J., in Gas-Phase and Surface Chemistry in Electronic Material Processing edited by Mountziaris, T.J., Smith, F.T.J., Westmoreland, P.R. and Paz-Pujalt, G.R., (Mat. Res. Soc. Proc. 334, Pittsburgh, PA, 1992).Google Scholar
5. Kelliher, J. T., Thornton, J., Dietz, N., Lucovsky, G., and Bachmann, K. J., in Low Temperature Molecular Beam Epitaxial Gallium Arsenide and Related Materials, edited Von Bardeleben, H. and Manasreh, O. (Elsevier Science Publishers, Amsterdam, 1993),.Google Scholar
6. Kelliher, J. T., Dietz, N., and Bachmann, K. J., in Proc. Electrochemical Soc. Sym. edited by Enstrom, R., Chu, S.N.G., Kamijoh, T. and Oeda, O., (Honolulu, Hawaii, 1993), in print.Google Scholar
7. Kern, W. and Decken, C.A., in Thin Film Processes edited by Vossen, J.L., and Kern, W., (Academic Press, Orlando, 1978), pp. 436.Google Scholar