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Surface and Interface Morphology of Small Islands of TiSi2 and ZrSi2 ON (001) Silicon

Published online by Cambridge University Press:  25 February 2011

B. L. Kropman ,
C. A. Sukow  and
R. J. Nemanich
B. L. Kropman
Affiliation:
Department of Applied Physics, University of Twente, Enschede, The Netherlands.
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695–8202.
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Abstract

The morphology of small islands of TiSi2 and ZrSi2 on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3–50Å) followed by an anneal at high temperatures (700–1200 °C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi2 is stable for layers as thin as 8Å, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si<110> directions is given in terms of interplanar lattice spacings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 589
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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