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Suppression of Self-Interstitials in Silicon During on Implantation via in-situ Photoexcitation

Published online by Cambridge University Press:  16 February 2011

J. Ravi ,
Yu. Erokhin ,
K. Christensen ,
G. A. Rozgonyi ,
B. K. Patnaik  and
C. W. White
J. Ravi
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
Yu. Erokhin
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
K. Christensen
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
G. A. Rozgonyi
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916
B. K. Patnaik
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Labs, Oak Ridge, TN
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Abstract

The influence of in-situ photoexcitation during low temperature implantation on selfinterstitial agglomeration following annaealing has been investigated using transmission electron microscopy (TEM). A reduction in the level of as-implanted damage determined by RBS and TEM occurs athermally during 150 keV self-ion implantation. The damage reduction following a 300°C anneal suggests that it is mostly divacancy related. Subsequent thermal annealing at 800°C resulted in the formation of 13111 rod like defects or dislocation loops for samples with and without in-situ photoexcitation, respectively. Estimation of the number of self-interstitials bound by these defects in the sample without in-situ photoexcitation corresponds to the implanted dose; whereas for the insitu photoexcitation sample a suppression of ≈2 orders in magnitude is found. The kinetics of the athermal annealing process are discussed within the framework of either a recombination enhanced defect reaction mechanism, or a charge state enhanced defect migration and Coulomb interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 475
Copyright
Copyright © Materials Research Society 1995

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References

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