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Superconducting Properties of Amorphous Multilayer Metal-Semiconductor Composites

Published online by Cambridge University Press:  26 February 2011

A. M. Kadin ,
R. W. Burkhardt ,
J. T. Chen ,
J. E. Keem  and
S. R. Ovshinsky
A. M. Kadin
Affiliation:
Energy Conversion Devices, 1675 West Maple Road, Troy, Michigan 48084
R. W. Burkhardt
Affiliation:
Energy Conversion Devices, 1675 West Maple Road, Troy, Michigan 48084
J. T. Chen
Affiliation:
Department of Physics, Wayne State University, Detroit, Michigan
J. E. Keem
Affiliation:
Energy Conversion Devices, 1675 West Maple Road, Troy, Michigan 48084
S. R. Ovshinsky
Affiliation:
Energy Conversion Devices, 1675 West Maple Road, Troy, Michigan 48084
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Abstract

Following the earlier multilayer work of Ovshinsky and colleagues, we have fabricated thin-film samples consisting of alternating periodic layers of a transition metal (Nb, Mo, W) and a semiconducting element (Si, Ge, C) by sequential sputtering from two targets onto room-temperature substrates. The regular repeat spacing has been varied from 10 Å to more than 100 Å, with as many as several hundred layer pairs. Crystalline epitaxy was not required or even desired; many samples were largely amorphous as determined from x-ray scattering. Electrical transport measurements of superconducting properties have been carried out parallel to the layers. Samples exhibited highly anisotropic superconducting critical magnetic fields, with some values in excess of 200kG parallel to the layers. Evidence suggesting an asymmetric interface profile will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 503
Copyright
Copyright © Materials Research Society 1985

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